Abstract
In order to analyze the deformation characteristics and removal mechanism of the single crystal silicon carbide at the nanoscale, the nanoscratching test was conducted on 6HSiC (0001) by using a Berkovich diamond indenter. The deformation and removal characteristics of 6H-SiC during a nanoscratching process by using a sharp indenter are significantly different from those through a single-point diamond turning (SPDT) method. The characteristics in different regimes of the scratching process like plastic flow and the form of fracture behavior were analyzed. The ductile/brittle transition (DBT) of this material was discussed in detail theoretically and experimentally. X-ray diffraction and a laser micro-Raman spectrometer were used for phase analysis after the scratching process. The results indicate that phase transformation has not occurred during the nanoscratching process of this material.
| Original language | English |
|---|---|
| Pages (from-to) | 160-165 |
| Number of pages | 6 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 31 |
| DOIs | |
| State | Published - Mar 2015 |
| Externally published | Yes |
Keywords
- 6H-SiC
- DBT
- Deformation
- HPPT
- Nanoscratching
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