Defect photoluminescence and structure properties of undoping (InxGa1-x)2O3 films and their dependence on sputtering pressure

Hongliang Lu; Shujie Jiao; Yiyin Nie; Shuo Liu; Shiyong Gao; Dongbo Wang; Jinzhong Wang; Lin Li; Xianghu Wang

doi:10.1016/j.jallcom.2020.153903

Defect photoluminescence and structure properties of undoping (In_xGa_1-x)₂O₃ films and their dependence on sputtering pressure

Hongliang Lu
, Shujie Jiao^*
, Yiyin Nie
, Shuo Liu
, Shiyong Gao
, Dongbo Wang
, Jinzhong Wang
, Lin Li
, Xianghu Wang

^*Corresponding author for this work

Harbin Institute of Technology
Harbin Normal University
Shanghai Dianji University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The (In_xGa_1-x)₂O₃ thin films were deposited on sapphire substrates by radio frequency magnetron sputtering with increasing sputtering pressure from 0.6 Pa to 1.6 Pa. X-ray diffraction analysis indicated In composition of (In_xGa_1-x)₂O₃ thin films maintained constant with the increase of sputtering pressure and In content and bandgaps of (In_xGa_1-x)₂O₃ thin films were estimated to be 6% and 4.78 eV by Vegard's law, respectively. The influence of sputtering pressure on structural and optical properties was discussed in detail. Especially, the origin of different emission of (In_xGa_1-x)₂O₃ thin films was investigated. The role of V_Ga defects on the green emission centered at about 550 nm had been clarified. The energy band diagram of (In_xGa_1-x)₂O₃ thin film was also proposed with intrinsic defect levels.

Original language	English
Article number	153903
Journal	Journal of Alloys and Compounds
Volume	823
DOIs	https://doi.org/10.1016/j.jallcom.2020.153903
State	Published - 15 May 2020
Externally published	Yes

Keywords

Gallium vacancies
Green luminescence
InGa)O thin films
Radio frequency magnetron sputtering
Sputtering pressure

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10.1016/j.jallcom.2020.153903

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@article{9ab3852c91484a6ca8521946854ce8a7,

title = "Defect photoluminescence and structure properties of undoping (InxGa1-x)2O3 films and their dependence on sputtering pressure",

abstract = "The (InxGa1-x)2O3 thin films were deposited on sapphire substrates by radio frequency magnetron sputtering with increasing sputtering pressure from 0.6 Pa to 1.6 Pa. X-ray diffraction analysis indicated In composition of (InxGa1-x)2O3 thin films maintained constant with the increase of sputtering pressure and In content and bandgaps of (InxGa1-x)2O3 thin films were estimated to be 6\% and 4.78 eV by Vegard's law, respectively. The influence of sputtering pressure on structural and optical properties was discussed in detail. Especially, the origin of different emission of (InxGa1-x)2O3 thin films was investigated. The role of VGa defects on the green emission centered at about 550 nm had been clarified. The energy band diagram of (InxGa1-x)2O3 thin film was also proposed with intrinsic defect levels.",

keywords = "Gallium vacancies, Green luminescence, InGa)O thin films, Radio frequency magnetron sputtering, Sputtering pressure",

author = "Hongliang Lu and Shujie Jiao and Yiyin Nie and Shuo Liu and Shiyong Gao and Dongbo Wang and Jinzhong Wang and Lin Li and Xianghu Wang",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = may,

day = "15",

doi = "10.1016/j.jallcom.2020.153903",

language = "英语",

volume = "823",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Defect photoluminescence and structure properties of undoping (InxGa1-x)2O3 films and their dependence on sputtering pressure

AU - Lu, Hongliang

AU - Jiao, Shujie

AU - Nie, Yiyin

AU - Liu, Shuo

AU - Gao, Shiyong

AU - Wang, Dongbo

AU - Wang, Jinzhong

AU - Li, Lin

AU - Wang, Xianghu

PY - 2020/5/15

Y1 - 2020/5/15

N2 - The (InxGa1-x)2O3 thin films were deposited on sapphire substrates by radio frequency magnetron sputtering with increasing sputtering pressure from 0.6 Pa to 1.6 Pa. X-ray diffraction analysis indicated In composition of (InxGa1-x)2O3 thin films maintained constant with the increase of sputtering pressure and In content and bandgaps of (InxGa1-x)2O3 thin films were estimated to be 6% and 4.78 eV by Vegard's law, respectively. The influence of sputtering pressure on structural and optical properties was discussed in detail. Especially, the origin of different emission of (InxGa1-x)2O3 thin films was investigated. The role of VGa defects on the green emission centered at about 550 nm had been clarified. The energy band diagram of (InxGa1-x)2O3 thin film was also proposed with intrinsic defect levels.

AB - The (InxGa1-x)2O3 thin films were deposited on sapphire substrates by radio frequency magnetron sputtering with increasing sputtering pressure from 0.6 Pa to 1.6 Pa. X-ray diffraction analysis indicated In composition of (InxGa1-x)2O3 thin films maintained constant with the increase of sputtering pressure and In content and bandgaps of (InxGa1-x)2O3 thin films were estimated to be 6% and 4.78 eV by Vegard's law, respectively. The influence of sputtering pressure on structural and optical properties was discussed in detail. Especially, the origin of different emission of (InxGa1-x)2O3 thin films was investigated. The role of VGa defects on the green emission centered at about 550 nm had been clarified. The energy band diagram of (InxGa1-x)2O3 thin film was also proposed with intrinsic defect levels.

KW - Gallium vacancies

KW - Green luminescence

KW - InGa)O thin films

KW - Radio frequency magnetron sputtering

KW - Sputtering pressure

UR - https://www.scopus.com/pages/publications/85078133861

U2 - 10.1016/j.jallcom.2020.153903

DO - 10.1016/j.jallcom.2020.153903

M3 - 文章

AN - SCOPUS:85078133861

SN - 0925-8388

VL - 823

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 153903

ER -

Defect photoluminescence and structure properties of undoping (In_xGa_1-x)₂O₃ films and their dependence on sputtering pressure

Abstract

Keywords

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