Abstract
The centrosymmetric crystal structure of SnSe2 intrinsically excludes a piezoelectric property. Herein, a piezoelectric effect of SnSe2 is activated via introducing Se vacancies (SnSe2-VSe), endowing a piezoelectric coefficient as high as 19.9 pm V−1. By leveraging the continuous anionic framework, the valence state compatibility, and the comparable atomic radii between Se and S, an atomically precise S-scheme SnSe2-VSe@In2S3 heterojunction is constructed. Systematic studies demonstrate that the Se vacancies generate strong localized polarization fields, which, in conjunction with the interfacial built-in electric field (IEF) in SnSe2-VSe@In2S3, significantly enhance the carrier separation efficiency by 16-fold as compared to pristine SnSe2-VSe. Theoretical calculations reveal that interfacial electronic coupling facilitates O2 adsorption, while an upward shift in the Sn d-band center optimizes the adsorption free energy of *OOH intermediates. Under the piezo-photocatalysis, the system achieves an H2O2 generation rate of 2.38 mmol g−1 h−1 through the oxygen reduction pathway, alongside enhanced O2 evolution via water oxidation. Further, in-situ generated H2O2 mediates efficient U(VI) reduction and precipitation, enabling almost 100% uranium extraction from both simulated wastewater and artificial seawater.
| Original language | English |
|---|---|
| Article number | e76664 |
| Journal | Advanced Functional Materials |
| Volume | 36 |
| Issue number | 58 |
| DOIs | |
| State | Published - 20 Jul 2026 |
| Externally published | Yes |
Keywords
- S-scheme heterojunction
- defect engineering
- interface regulation
- piezo-photocatalysis
- uranium extraction
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