Deep ultraviolet detectors based on wide bandgap semiconductors: a review

Jiandong Hao; Ling Li; Peng Gao; Xiangqian Jiang; Chuncheng Ban; Ningqiang Shi

doi:10.1007/s11051-023-05694-6

Deep ultraviolet detectors based on wide bandgap semiconductors: a review

Jiandong Hao
, Ling Li^*
, Peng Gao
, Xiangqian Jiang
, Chuncheng Ban
, Ningqiang Shi

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology
Ministry of Education of the People's Republic of China
Tianjin Institute of Power Sources

Research output: Contribution to journal › Review article › peer-review

28 Scopus citations

Abstract

Deep ultraviolet (DUV) light is easily absorbed by the ozone layer. There is no interference from DUV light at ground and low altitude. Therefore, DUV detection has high applications in criminal investigation, the security monitoring of power grid, and forest fire alarm. Wide bandgap semiconductors are more suitable for nanodevices with high frequency and high reaction rate, which have wide bandgap, high electron saturation mobility, high thermal conductivity, and high breakdown strength. In this paper, the nanostructures, self-powered technologies, flexible substrates, electrical characteristics, and simulation optimization of wide bandgap semiconductors are thoroughly summarized with recent studies. The working principle, application, optimization, and technical difficulties of DUV detectors are also discussed.

Original language	English
Article number	81
Journal	Journal of Nanoparticle Research
Volume	25
Issue number	4
DOIs	https://doi.org/10.1007/s11051-023-05694-6
State	Published - Apr 2023

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 16 Peace, Justice and Strong Institutions

Keywords

Deep ultraviolet detectors
Electrical characteristics
Flexible substrate
Nanostructures
Self-powered
Wide-bandgap semiconductors

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10.1007/s11051-023-05694-6

Cite this

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title = "Deep ultraviolet detectors based on wide bandgap semiconductors: a review",

abstract = "Deep ultraviolet (DUV) light is easily absorbed by the ozone layer. There is no interference from DUV light at ground and low altitude. Therefore, DUV detection has high applications in criminal investigation, the security monitoring of power grid, and forest fire alarm. Wide bandgap semiconductors are more suitable for nanodevices with high frequency and high reaction rate, which have wide bandgap, high electron saturation mobility, high thermal conductivity, and high breakdown strength. In this paper, the nanostructures, self-powered technologies, flexible substrates, electrical characteristics, and simulation optimization of wide bandgap semiconductors are thoroughly summarized with recent studies. The working principle, application, optimization, and technical difficulties of DUV detectors are also discussed.",

keywords = "Deep ultraviolet detectors, Electrical characteristics, Flexible substrate, Nanostructures, Self-powered, Wide-bandgap semiconductors",

author = "Jiandong Hao and Ling Li and Peng Gao and Xiangqian Jiang and Chuncheng Ban and Ningqiang Shi",

note = "Publisher Copyright: {\textcopyright} 2023, The Author(s), under exclusive licence to Springer Nature B.V.",

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doi = "10.1007/s11051-023-05694-6",

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T2 - a review

AU - Hao, Jiandong

AU - Li, Ling

AU - Gao, Peng

AU - Jiang, Xiangqian

AU - Ban, Chuncheng

AU - Shi, Ningqiang

PY - 2023/4

Y1 - 2023/4

N2 - Deep ultraviolet (DUV) light is easily absorbed by the ozone layer. There is no interference from DUV light at ground and low altitude. Therefore, DUV detection has high applications in criminal investigation, the security monitoring of power grid, and forest fire alarm. Wide bandgap semiconductors are more suitable for nanodevices with high frequency and high reaction rate, which have wide bandgap, high electron saturation mobility, high thermal conductivity, and high breakdown strength. In this paper, the nanostructures, self-powered technologies, flexible substrates, electrical characteristics, and simulation optimization of wide bandgap semiconductors are thoroughly summarized with recent studies. The working principle, application, optimization, and technical difficulties of DUV detectors are also discussed.

AB - Deep ultraviolet (DUV) light is easily absorbed by the ozone layer. There is no interference from DUV light at ground and low altitude. Therefore, DUV detection has high applications in criminal investigation, the security monitoring of power grid, and forest fire alarm. Wide bandgap semiconductors are more suitable for nanodevices with high frequency and high reaction rate, which have wide bandgap, high electron saturation mobility, high thermal conductivity, and high breakdown strength. In this paper, the nanostructures, self-powered technologies, flexible substrates, electrical characteristics, and simulation optimization of wide bandgap semiconductors are thoroughly summarized with recent studies. The working principle, application, optimization, and technical difficulties of DUV detectors are also discussed.

KW - Deep ultraviolet detectors

KW - Electrical characteristics

KW - Flexible substrate

KW - Nanostructures

KW - Self-powered

KW - Wide-bandgap semiconductors

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DO - 10.1007/s11051-023-05694-6

M3 - 文献综述

AN - SCOPUS:85153210713

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JO - Journal of Nanoparticle Research

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ER -

Deep ultraviolet detectors based on wide bandgap semiconductors: a review

Abstract

UN SDGs

Keywords

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