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Deep ultraviolet detector with boron nitride nanoribbons transferred by dry and wet processes

  • Jiandong Hao
  • , Ling Li*
  • , Bin Zhang*
  • , Ningqiang Shi
  • , Tingwei Yan
  • , Jinchang Meng
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • Ministry of Education of the People's Republic of China
  • The 11th Research Institute of China Electronics Technology Group Corporation

Research output: Contribution to journalArticlepeer-review

Abstract

We used dry-wet transfer to prepare boron nitride nanoribbons (BNNRs) film. The effects that the different BNNRs film areas by dry transfer, the different areas and thicknesses of BNNRs film by wet transfer on BNNRs deep ultraviolet (DUV) detector were investigated, respectively. There is an excellent capability of detection and sensing for dry transfer DUV detector. The photocurrent rises with the area of the film. The maximum photocurrent (Iphmax) is 34 pA at 1.64 mW/cm2 (0.3 × 0.7 cm2, 30 mg). Rise and fall time are around 0.38s/0.41s. The responsivity and detectivity are 0.23μA/W and 5.57 × 107 (0.41 mW/cm2, Vbias = 10V). The direct transfer of the MCE filter membrane by wet transfer can control the size and thickness of the film. The Iphmax becomes larger with the thickness of the BNNRs film (Iphmax: 171 pA). And the time response is about 0.73s/0.72s, the responsivity and detectivity are up to 0.71μA/W and 1.72 × 108 (0.41 mW/cm2, Vbias = 10V). However, it does not have a better ability to sense the DUV light than dry transfer. Therefore, different transfer methods can be applied to various requirements. This provides a good prospect for the high-performance DUV detectors.

Original languageEnglish
Article number108952
JournalMaterials Science in Semiconductor Processing
Volume185
DOIs
StatePublished - Jan 2025

Keywords

  • Boron nitride nanoribbons
  • DUV detector
  • Dry transfer
  • Wet transfer

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