CVD growth of large–scale hexagon-like shaped MoSe2 monolayers with sawtooth edge

Xiaoshuang Chen; Ping An Hu; Kun Song; Xin Wang; Chunling Zuo; Rui Yang; Jinping Wang

doi:10.1016/j.cplett.2019.136663

CVD growth of large–scale hexagon-like shaped MoSe₂ monolayers with sawtooth edge

Xiaoshuang Chen^*
, Ping An Hu
, Kun Song
, Xin Wang
, Chunling Zuo
, Rui Yang
, Jinping Wang

^*Corresponding author for this work

School of Materials Science and Engineering

Qiqihar University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this work, we developed a process for preparing hexagon-like shaped MoSe₂ monolayers with sawtooth edge via controllable chemical vapor deposition (CVD) technique in atmospheric pressure, resulting in large–scale MoSe₂ atom layers with the size of ~20 μm and the height of ~0.8 nm. Raman, Photoluminescence (PL) and transmission electron microscopy (TEM) characterizations affirmed that the grown products possess high quality, and the electrical measurement results of the device with the mobility of 0.21 cm² V⁻¹ s⁻¹ based on as-obtained products manifest that the underlying applications of MoSe₂ in nanoelectronic field.

Original language	English
Article number	136663
Journal	Chemical Physics Letters
Volume	733
DOIs	https://doi.org/10.1016/j.cplett.2019.136663
State	Published - 16 Oct 2019

Keywords

Chemical vapor deposition
Field effect transistor
Hexagon-like
MoSe
Two-dimensional materials

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10.1016/j.cplett.2019.136663

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title = "CVD growth of large–scale hexagon-like shaped MoSe2 monolayers with sawtooth edge",

abstract = "In this work, we developed a process for preparing hexagon-like shaped MoSe2 monolayers with sawtooth edge via controllable chemical vapor deposition (CVD) technique in atmospheric pressure, resulting in large–scale MoSe2 atom layers with the size of \textasciitilde{}20 μm and the height of \textasciitilde{}0.8 nm. Raman, Photoluminescence (PL) and transmission electron microscopy (TEM) characterizations affirmed that the grown products possess high quality, and the electrical measurement results of the device with the mobility of 0.21 cm2 V−1 s−1 based on as-obtained products manifest that the underlying applications of MoSe2 in nanoelectronic field.",

keywords = "Chemical vapor deposition, Field effect transistor, Hexagon-like, MoSe, Two-dimensional materials",

author = "Xiaoshuang Chen and Hu, \{Ping An\} and Kun Song and Xin Wang and Chunling Zuo and Rui Yang and Jinping Wang",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = oct,

day = "16",

doi = "10.1016/j.cplett.2019.136663",

language = "英语",

volume = "733",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - CVD growth of large–scale hexagon-like shaped MoSe2 monolayers with sawtooth edge

AU - Chen, Xiaoshuang

AU - Hu, Ping An

AU - Song, Kun

AU - Wang, Xin

AU - Zuo, Chunling

AU - Yang, Rui

AU - Wang, Jinping

PY - 2019/10/16

Y1 - 2019/10/16

N2 - In this work, we developed a process for preparing hexagon-like shaped MoSe2 monolayers with sawtooth edge via controllable chemical vapor deposition (CVD) technique in atmospheric pressure, resulting in large–scale MoSe2 atom layers with the size of ~20 μm and the height of ~0.8 nm. Raman, Photoluminescence (PL) and transmission electron microscopy (TEM) characterizations affirmed that the grown products possess high quality, and the electrical measurement results of the device with the mobility of 0.21 cm2 V−1 s−1 based on as-obtained products manifest that the underlying applications of MoSe2 in nanoelectronic field.

AB - In this work, we developed a process for preparing hexagon-like shaped MoSe2 monolayers with sawtooth edge via controllable chemical vapor deposition (CVD) technique in atmospheric pressure, resulting in large–scale MoSe2 atom layers with the size of ~20 μm and the height of ~0.8 nm. Raman, Photoluminescence (PL) and transmission electron microscopy (TEM) characterizations affirmed that the grown products possess high quality, and the electrical measurement results of the device with the mobility of 0.21 cm2 V−1 s−1 based on as-obtained products manifest that the underlying applications of MoSe2 in nanoelectronic field.

KW - Chemical vapor deposition

KW - Field effect transistor

KW - Hexagon-like

KW - MoSe

KW - Two-dimensional materials

UR - https://www.scopus.com/pages/publications/85070649878

U2 - 10.1016/j.cplett.2019.136663

DO - 10.1016/j.cplett.2019.136663

M3 - 文章

AN - SCOPUS:85070649878

SN - 0009-2614

VL - 733

JO - Chemical Physics Letters

JF - Chemical Physics Letters

M1 - 136663

ER -

CVD growth of large–scale hexagon-like shaped MoSe₂ monolayers with sawtooth edge

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Keywords

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