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Current formulas of silicon-glass anodic bonding

  • Jialu Tang*
  • , Xiaowei Liu
  • , Rongyan Chuai
  • , Haifeng Zhang
  • *Corresponding author for this work
  • Harbin Institute of Technology
  • Shenyang University of Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

To simulate the whole process of anodic bonding accurately, this paper makes the research on the current of anodic bonding with area and point cathode respectively. Based on the known models of anodic bonding, novel current formulas are deduced for anodic bonding with area cathode by means of the relation between glass resistivity and temperature. After calibrated by statistics of experimental data, the formulas quantitatively describe the relation between bonding current with time, as well as bonding voltage and bonding temperature. Further, using spreading model of anodic bonding, an approach to dealing with the problem of point cathode current is presented. The experiments prove that the current formulas from the approach are able to indicate the law of point cathode current.

Original languageEnglish
Title of host publicationOptical, Electronic Materials and Applications
Pages278-284
Number of pages7
DOIs
StatePublished - 2011
EventInternational Conference on Optical, Electronic Materials and Applications 2011, OEMA 2011 - Chongqing, China
Duration: 4 Mar 20116 Mar 2011

Publication series

NameAdvanced Materials Research
Volume216
ISSN (Print)1022-6680

Conference

ConferenceInternational Conference on Optical, Electronic Materials and Applications 2011, OEMA 2011
Country/TerritoryChina
CityChongqing
Period4/03/116/03/11

Keywords

  • Anodic bonding
  • Current formula
  • Point cathode
  • Quantitative relation

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