Cu-O-Si-C interface-induced high-adhesion and anticorrosion of the DLC coatings on inner wall of copper tube prepared by PECVD

Deposition of well-adherent diamond-like‑carbon (DLC) films on copper is relatively difficult due to weak bonds between copper and carbon. The Cu-O-Si-C nanostructure was proposed to improve the adhesion and the corrosion-resistance of multilayer Si-DLC/DLC film on an inner surface of copper tube prepared by PECVD. First, the copper alloy was pretreated by oxygen. Then mixture gas of tetramethylhexylsilane (TMS) and oxygen was used to deposit interlayer, and finally multilayer Si-DLC/DLC film was deposited using the gas C₂H₂ and argon. Transmission Electron Microscope (TEM) demonstrated that there existed CuSiO₃, CuO, SiC, SiO₂ nanostructures in the interlayer. And X-ray Photoelectron Spectroscopy (XPS) proved that there were actually Cu–O, Si–C and Si–O bonds at the interface. These bonds and compounds enhanced the adhesion between multilayer Si-DLC/DLC film and copper substrate. The polarization potential was significantly improved to −0.07 V, achieved through the process of oxygen pre-implantation and the combined deposition of oxygen and TMS. Furthermore, the adhesion of the film was estimated by the Rockwell test and reached HF1-HF2. The Cu-O-Si-C microstructure plays a crucial role in enhancing the adhesion and corrosion resistance of multilayer Si-DLC/DLC film.