CsPbBr₃单晶生长技术研究进展

CsPbBr₃ single crystals have demonstrated significant potential in radiation detection and optoelectronic devices due to their low defect density, high carrier mobility, and excellent stability. Consequently, the growth of high-quality single crystals has become a major research focus. This article provides a systematic review of mainstream growth techniques for CsPbBr₃ single crystals, with emphasis on both melt-based methods (such as the Bridgman and edge-defined film-fed growth techniques) and solution-based approaches (including inverse temperature crystallization, antisolvent crystallization, cooling crystallization, and evaporation crystallization). While melt methods enable the production of large-sized crystals, the high temperatures involved often lead to component volatilization and phase-transition-induced defects. Solution methods, although conducted at lower temperatures and capable of effectively suppressing thermal defects while achieving high crystalline quality, commonly face challenges such as limited crystal size, solvent residue, and prolonged growth cycles. A comparative analysis further evaluates the advantages and limitations of both strategies in terms of crystal quality, size control, defect suppression, and scalability. Future research should focus on elucidating crystallization mechanisms, achieving precise stoichiometric control, and developing novel processes to facilitate the large-scale industrial application of CsPbBr₃ single crystals. This review offers valuable insights into the controllable synthesis of large-size, high-quality CsPbBr₃ single crystals and their application in high-performance devices.