Composition and nanohardness of sic films deposited by electron beam physical vapor deposition

Min Teng; Xiaodong He; Yue Sun

doi:10.1142/s0217979209061822

Composition and nanohardness of sic films deposited by electron beam physical vapor deposition

Min Teng^*
, Xiaodong He
, Yue Sun

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

SiC films with a quantity of carbon and silicon were obtained by electron beam physical vapor deposition (EB-PVD) from a sintered SiC target with different current intensity of EB. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films in order to study the influence of current intensity of EB on the compositions in the deposited films. At the same time, the nanohardness of the deposited films was investigated.

Original language	English
Pages (from-to)	1910-1915
Number of pages	6
Journal	International Journal of Modern Physics B
Volume	23
Issue number	6-7
DOIs	https://doi.org/10.1142/s0217979209061822
State	Published - 20 Mar 2009

Keywords

EB-PVD
SiC film
composition
nanohardness.

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10.1142/s0217979209061822

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@article{307298f6882f4e0da783abe3ed1e6a6e,

title = "Composition and nanohardness of sic films deposited by electron beam physical vapor deposition",

abstract = "SiC films with a quantity of carbon and silicon were obtained by electron beam physical vapor deposition (EB-PVD) from a sintered SiC target with different current intensity of EB. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films in order to study the influence of current intensity of EB on the compositions in the deposited films. At the same time, the nanohardness of the deposited films was investigated.",

keywords = "EB-PVD, SiC film, composition, nanohardness.",

author = "Min Teng and Xiaodong He and Yue Sun",

year = "2009",

month = mar,

day = "20",

doi = "10.1142/s0217979209061822",

language = "英语",

volume = "23",

pages = "1910--1915",

journal = "International Journal of Modern Physics B",

issn = "0217-9792",

publisher = "World Scientific",

number = "6-7",

}

TY - JOUR

T1 - Composition and nanohardness of sic films deposited by electron beam physical vapor deposition

AU - Teng, Min

AU - He, Xiaodong

AU - Sun, Yue

PY - 2009/3/20

Y1 - 2009/3/20

N2 - SiC films with a quantity of carbon and silicon were obtained by electron beam physical vapor deposition (EB-PVD) from a sintered SiC target with different current intensity of EB. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films in order to study the influence of current intensity of EB on the compositions in the deposited films. At the same time, the nanohardness of the deposited films was investigated.

AB - SiC films with a quantity of carbon and silicon were obtained by electron beam physical vapor deposition (EB-PVD) from a sintered SiC target with different current intensity of EB. The X-ray photoelectron spectroscopy (XPS) was used for characterization of chemical bonding states of C and Si elements in SiC films in order to study the influence of current intensity of EB on the compositions in the deposited films. At the same time, the nanohardness of the deposited films was investigated.

KW - EB-PVD

KW - SiC film

KW - composition

KW - nanohardness.

UR - https://www.scopus.com/pages/publications/66749133393

U2 - 10.1142/s0217979209061822

DO - 10.1142/s0217979209061822

M3 - 文章

AN - SCOPUS:66749133393

SN - 0217-9792

VL - 23

SP - 1910

EP - 1915

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

IS - 6-7

ER -

Composition and nanohardness of sic films deposited by electron beam physical vapor deposition

Abstract

Keywords

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