Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes

Lei Wang; Ningyang Liu; Bo Li; Huiping Zhu; Xiaoting Shan; Qingxi Yuan; Xuewen Zhang; Zheng Gong; Fazhan Zhao; Naixin Liu; Mengxin Liu; Binhong Li; Jiantou Gao; Yang Huang; Jianqun Yang; Xingji Li; Jiajun Luo; Zhengsheng Han; Xinyu Liu

doi:10.1109/TNS.2020.2975002

Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes

Lei Wang
, Ningyang Liu
, Bo Li
, Huiping Zhu
, Xiaoting Shan
, Qingxi Yuan
, Xuewen Zhang
, Zheng Gong
, Fazhan Zhao
, Naixin Liu
, Mengxin Liu
, Binhong Li
, Jiantou Gao
, Yang Huang
, Jianqun Yang
, Xingji Li
, Jiajun Luo
, Zhengsheng Han
, Xinyu Liu

Key Laboratory of Silicon Device Technology
Guangdong Institute of Semiconductor Industrial Technology
CAS - Institute of High Energy Physics
Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The effects of the white-light X-ray and 170-keV proton beam irradiation on the electrical and optical characteristics of the InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) are analyzed and compared. Different from the negative effects of the proton irradiation, the X-ray irradiation shows positive effects on the LEDs' performance. In detail, after the 100 Mrad(Si) X-ray irradiation, the p-n junction resistance decreases from the original 2.51 to 2.08Ω , the light output power increases from 170 to 203 mW (at a forward voltage of 3.2 V), and the maximal external quantum efficiency (EQE) increases from 56.7% to 61.8%. Based on the ABC model fittings, both the Shockley-Read-Hall recombination rate and the radiative recombination rate in the MQWs are improved by the X-ray irradiation. The Hall effect measurements reveal the chemical bond breaking of the Mg-H complex in the p-type GaN. Therefore, the improvement of the LED by the X-ray irradiation should be caused by the chemical bond variations of the defect-related complex in the MQWs and the Mg-H complex in the p-type GaN.

Original language	English
Article number	9003180
Pages (from-to)	1345-1350
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	67
Issue number	7
DOIs	https://doi.org/10.1109/TNS.2020.2975002
State	Published - Jul 2020
Externally published	Yes

Keywords

ABC model
InGaN/GaN multiple quantum wells (MQWs)
Mg-H
X-ray
external quantum efficiency (EQE)
hall measurement
p-type GaN
proton

Access to Document

10.1109/TNS.2020.2975002

Cite this

Wang, L., Liu, N., Li, B., Zhu, H., Shan, X., Yuan, Q., Zhang, X., Gong, Z., Zhao, F., Liu, N., Liu, M., Li, B., Gao, J., Huang, Y., Yang, J., Li, X., Luo, J., Han, Z., & Liu, X. (2020). Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes. IEEE Transactions on Nuclear Science, 67(7), 1345-1350. Article 9003180. https://doi.org/10.1109/TNS.2020.2975002

@article{2289f68c2fbb4247b06559701f4a45b2,

title = "Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes",

abstract = "The effects of the white-light X-ray and 170-keV proton beam irradiation on the electrical and optical characteristics of the InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) are analyzed and compared. Different from the negative effects of the proton irradiation, the X-ray irradiation shows positive effects on the LEDs' performance. In detail, after the 100 Mrad(Si) X-ray irradiation, the p-n junction resistance decreases from the original 2.51 to 2.08Ω , the light output power increases from 170 to 203 mW (at a forward voltage of 3.2 V), and the maximal external quantum efficiency (EQE) increases from 56.7\% to 61.8\%. Based on the ABC model fittings, both the Shockley-Read-Hall recombination rate and the radiative recombination rate in the MQWs are improved by the X-ray irradiation. The Hall effect measurements reveal the chemical bond breaking of the Mg-H complex in the p-type GaN. Therefore, the improvement of the LED by the X-ray irradiation should be caused by the chemical bond variations of the defect-related complex in the MQWs and the Mg-H complex in the p-type GaN.",

keywords = "ABC model, InGaN/GaN multiple quantum wells (MQWs), Mg-H, X-ray, external quantum efficiency (EQE), hall measurement, p-type GaN, proton",

author = "Lei Wang and Ningyang Liu and Bo Li and Huiping Zhu and Xiaoting Shan and Qingxi Yuan and Xuewen Zhang and Zheng Gong and Fazhan Zhao and Naixin Liu and Mengxin Liu and Binhong Li and Jiantou Gao and Yang Huang and Jianqun Yang and Xingji Li and Jiajun Luo and Zhengsheng Han and Xinyu Liu",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2020",

month = jul,

doi = "10.1109/TNS.2020.2975002",

language = "英语",

volume = "67",

pages = "1345--1350",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

Wang, L, Liu, N, Li, B, Zhu, H, Shan, X, Yuan, Q, Zhang, X, Gong, Z, Zhao, F, Liu, N, Liu, M, Li, B, Gao, J, Huang, Y, Yang, J , Li, X, Luo, J, Han, Z & Liu, X 2020, 'Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes', IEEE Transactions on Nuclear Science, vol. 67, no. 7, 9003180, pp. 1345-1350. https://doi.org/10.1109/TNS.2020.2975002

TY - JOUR

T1 - Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes

AU - Wang, Lei

AU - Liu, Ningyang

AU - Li, Bo

AU - Zhu, Huiping

AU - Shan, Xiaoting

AU - Yuan, Qingxi

AU - Zhang, Xuewen

AU - Gong, Zheng

AU - Zhao, Fazhan

AU - Liu, Naixin

AU - Liu, Mengxin

AU - Li, Binhong

AU - Gao, Jiantou

AU - Huang, Yang

AU - Yang, Jianqun

AU - Li, Xingji

AU - Luo, Jiajun

AU - Han, Zhengsheng

AU - Liu, Xinyu

PY - 2020/7

Y1 - 2020/7

N2 - The effects of the white-light X-ray and 170-keV proton beam irradiation on the electrical and optical characteristics of the InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) are analyzed and compared. Different from the negative effects of the proton irradiation, the X-ray irradiation shows positive effects on the LEDs' performance. In detail, after the 100 Mrad(Si) X-ray irradiation, the p-n junction resistance decreases from the original 2.51 to 2.08Ω , the light output power increases from 170 to 203 mW (at a forward voltage of 3.2 V), and the maximal external quantum efficiency (EQE) increases from 56.7% to 61.8%. Based on the ABC model fittings, both the Shockley-Read-Hall recombination rate and the radiative recombination rate in the MQWs are improved by the X-ray irradiation. The Hall effect measurements reveal the chemical bond breaking of the Mg-H complex in the p-type GaN. Therefore, the improvement of the LED by the X-ray irradiation should be caused by the chemical bond variations of the defect-related complex in the MQWs and the Mg-H complex in the p-type GaN.

AB - The effects of the white-light X-ray and 170-keV proton beam irradiation on the electrical and optical characteristics of the InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) are analyzed and compared. Different from the negative effects of the proton irradiation, the X-ray irradiation shows positive effects on the LEDs' performance. In detail, after the 100 Mrad(Si) X-ray irradiation, the p-n junction resistance decreases from the original 2.51 to 2.08Ω , the light output power increases from 170 to 203 mW (at a forward voltage of 3.2 V), and the maximal external quantum efficiency (EQE) increases from 56.7% to 61.8%. Based on the ABC model fittings, both the Shockley-Read-Hall recombination rate and the radiative recombination rate in the MQWs are improved by the X-ray irradiation. The Hall effect measurements reveal the chemical bond breaking of the Mg-H complex in the p-type GaN. Therefore, the improvement of the LED by the X-ray irradiation should be caused by the chemical bond variations of the defect-related complex in the MQWs and the Mg-H complex in the p-type GaN.

KW - ABC model

KW - InGaN/GaN multiple quantum wells (MQWs)

KW - Mg-H

KW - X-ray

KW - external quantum efficiency (EQE)

KW - hall measurement

KW - p-type GaN

KW - proton

UR - https://www.scopus.com/pages/publications/85088876106

U2 - 10.1109/TNS.2020.2975002

DO - 10.1109/TNS.2020.2975002

M3 - 文章

AN - SCOPUS:85088876106

SN - 0018-9499

VL - 67

SP - 1345

EP - 1350

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 7

M1 - 9003180

ER -

Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this