Comparison of SAB methods for room temperature bonding of Si wafers

Keigo Oshikawa; Chenxi Wang; Masahisa Fujino; Tadatomo Suga; Kenichi Iguchi; Haruo Nakawaza; Yoshikazu Takahashi

doi:10.1109/LTB-3D.2012.6238066

Comparison of SAB methods for room temperature bonding of Si wafers

Keigo Oshikawa^*
, Chenxi Wang
, Masahisa Fujino
, Tadatomo Suga
, Kenichi Iguchi
, Haruo Nakawaza
, Yoshikazu Takahashi

^*Corresponding author for this work

The University of Tokyo
Fuji Electric Co., Ltd.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Three variations of SAB method are compared for Si-Si direct bonding at room temperature. The bonded interfaces are characterized by amorphous layers depending on the surface activation processes by ion beam or plasma irradiation.

Original language	English
Title of host publication	Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Pages	113
Number of pages	1
DOIs	https://doi.org/10.1109/LTB-3D.2012.6238066
State	Published - 2012
Externally published	Yes
Event	2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan Duration: 22 May 2012 → 23 May 2012

Publication series

Name	Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012

Conference

Conference	2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Country/Territory	Japan
City	Tokyo
Period	22/05/12 → 23/05/12

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10.1109/LTB-3D.2012.6238066

Cite this

Oshikawa, K., Wang, C., Fujino, M., Suga, T., Iguchi, K., Nakawaza, H., & Takahashi, Y. (2012). Comparison of SAB methods for room temperature bonding of Si wafers. In Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 (pp. 113). Article 6238066 (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012). https://doi.org/10.1109/LTB-3D.2012.6238066

@inproceedings{0501195c406845558a8bc9bd0803e92a,

title = "Comparison of SAB methods for room temperature bonding of Si wafers",

abstract = "Three variations of SAB method are compared for Si-Si direct bonding at room temperature. The bonded interfaces are characterized by amorphous layers depending on the surface activation processes by ion beam or plasma irradiation.",

author = "Keigo Oshikawa and Chenxi Wang and Masahisa Fujino and Tadatomo Suga and Kenichi Iguchi and Haruo Nakawaza and Yoshikazu Takahashi",

year = "2012",

doi = "10.1109/LTB-3D.2012.6238066",

language = "英语",

isbn = "9781467307420",

series = "Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012",

pages = "113",

booktitle = "Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012",

note = "2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 ; Conference date: 22-05-2012 Through 23-05-2012",

}

Oshikawa, K, Wang, C, Fujino, M, Suga, T, Iguchi, K, Nakawaza, H & Takahashi, Y 2012, Comparison of SAB methods for room temperature bonding of Si wafers. in Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012., 6238066, Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, pp. 113, 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan, 22/05/12. https://doi.org/10.1109/LTB-3D.2012.6238066

Comparison of SAB methods for room temperature bonding of Si wafers. / Oshikawa, Keigo; Wang, Chenxi; Fujino, Masahisa et al.
Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. 2012. p. 113 6238066 (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparison of SAB methods for room temperature bonding of Si wafers

AU - Oshikawa, Keigo

AU - Wang, Chenxi

AU - Fujino, Masahisa

AU - Suga, Tadatomo

AU - Iguchi, Kenichi

AU - Nakawaza, Haruo

AU - Takahashi, Yoshikazu

PY - 2012

Y1 - 2012

N2 - Three variations of SAB method are compared for Si-Si direct bonding at room temperature. The bonded interfaces are characterized by amorphous layers depending on the surface activation processes by ion beam or plasma irradiation.

AB - Three variations of SAB method are compared for Si-Si direct bonding at room temperature. The bonded interfaces are characterized by amorphous layers depending on the surface activation processes by ion beam or plasma irradiation.

UR - https://www.scopus.com/pages/publications/84864836789

U2 - 10.1109/LTB-3D.2012.6238066

DO - 10.1109/LTB-3D.2012.6238066

M3 - 会议稿件

AN - SCOPUS:84864836789

SN - 9781467307420

T3 - Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012

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BT - Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012

T2 - 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012

Y2 - 22 May 2012 through 23 May 2012

ER -

Oshikawa K, Wang C, Fujino M, Suga T, Iguchi K, Nakawaza H et al. Comparison of SAB methods for room temperature bonding of Si wafers. In Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. 2012. p. 113. 6238066. (Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012). doi: 10.1109/LTB-3D.2012.6238066

Comparison of SAB methods for room temperature bonding of Si wafers

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