Comparative Study of Properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 Films Grown by Low-Pressure Metal Organic Chemical Vapour Deposition

Bai Jun Zhao; Hong Jun Yang; Guo Tong Du; Guo Qing Miao; Tian Peng Yang; Yuan Tao Zhang; Zhong Min Gao; Jin Zhong Wang; Xiu Jun Fang; Da Li Liu; Wan Cheng Li; Yan Ma; Xiao Tian Yang; Bo Yang Liu

doi:10.1088/0256-307X/20/11/041

Comparative Study of Properties of ZnO/GaN/Al₂O₃ and ZnO/Al₂O₃ Films Grown by Low-Pressure Metal Organic Chemical Vapour Deposition

Bai Jun Zhao^*
, Hong Jun Yang
, Guo Tong Du
, Guo Qing Miao
, Tian Peng Yang
, Yuan Tao Zhang
, Zhong Min Gao
, Jin Zhong Wang
, Xiu Jun Fang
, Da Li Liu
, Wan Cheng Li
, Yan Ma
, Xiao Tian Yang
, Bo Yang Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al₂O₃ films and c-Al ₂O₃ substrates. The structure and optical properties of the ZnO/GaN/Al₂O₃ and ZnO/Al₂O₃ films have been investigated to determine the differences between the two substrates. ZnO films on GaN/Al₂O₃ show very strong emission features associated with exciton transitions, just as ZnO films on Al₂O₃, while the crystalline structural qualities for ZnO films on GaN/Al₂O₃ are much better than those for ZnO films directly grown on Al₂O₃ substrates. Zn and O elements in the deposited ZnO/GaN/Al₂O₃ and ZnO/Al ₂O₃ films are investigated and compared by x-ray photoelectron spectroscopy. According to the statistical results, the Zn/O ratio changes from Zn-rich for ZnO/Al₂O₃ films to O-rich for ZnO/GaN/Al₂O₃ films.

Original language	English
Pages (from-to)	2045-2048
Number of pages	4
Journal	Chinese Physics Letters
Volume	20
Issue number	11
DOIs	https://doi.org/10.1088/0256-307X/20/11/041
State	Published - Nov 2003
Externally published	Yes

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Zhao, B. J., Yang, H. J., Du, G. T., Miao, G. Q., Yang, T. P., Zhang, Y. T., Gao, Z. M., Wang, J. Z., Fang, X. J., Liu, D. L., Li, W. C., Ma, Y., Yang, X. T., & Liu, B. Y. (2003). Comparative Study of Properties of ZnO/GaN/Al₂O₃ and ZnO/Al₂O₃ Films Grown by Low-Pressure Metal Organic Chemical Vapour Deposition. Chinese Physics Letters, 20(11), 2045-2048. https://doi.org/10.1088/0256-307X/20/11/041

@article{d8bab9799618483fba7f2ea6e0ee58f6,

title = "Comparative Study of Properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 Films Grown by Low-Pressure Metal Organic Chemical Vapour Deposition",

abstract = "ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al2O3 films and c-Al 2O3 substrates. The structure and optical properties of the ZnO/GaN/Al2O3 and ZnO/Al2O3 films have been investigated to determine the differences between the two substrates. ZnO films on GaN/Al2O3 show very strong emission features associated with exciton transitions, just as ZnO films on Al2O3, while the crystalline structural qualities for ZnO films on GaN/Al2O3 are much better than those for ZnO films directly grown on Al2O3 substrates. Zn and O elements in the deposited ZnO/GaN/Al2O3 and ZnO/Al 2O3 films are investigated and compared by x-ray photoelectron spectroscopy. According to the statistical results, the Zn/O ratio changes from Zn-rich for ZnO/Al2O3 films to O-rich for ZnO/GaN/Al2O3 films.",

author = "Zhao, \{Bai Jun\} and Yang, \{Hong Jun\} and Du, \{Guo Tong\} and Miao, \{Guo Qing\} and Yang, \{Tian Peng\} and Zhang, \{Yuan Tao\} and Gao, \{Zhong Min\} and Wang, \{Jin Zhong\} and Fang, \{Xiu Jun\} and Liu, \{Da Li\} and Li, \{Wan Cheng\} and Yan Ma and Yang, \{Xiao Tian\} and Liu, \{Bo Yang\}",

year = "2003",

month = nov,

doi = "10.1088/0256-307X/20/11/041",

language = "英语",

volume = "20",

pages = "2045--2048",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "11",

}

Zhao, BJ, Yang, HJ, Du, GT, Miao, GQ, Yang, TP, Zhang, YT, Gao, ZM, Wang, JZ, Fang, XJ, Liu, DL, Li, WC, Ma, Y, Yang, XT & Liu, BY 2003, 'Comparative Study of Properties of ZnO/GaN/Al₂O₃ and ZnO/Al₂O₃ Films Grown by Low-Pressure Metal Organic Chemical Vapour Deposition', Chinese Physics Letters, vol. 20, no. 11, pp. 2045-2048. https://doi.org/10.1088/0256-307X/20/11/041

TY - JOUR

T1 - Comparative Study of Properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 Films Grown by Low-Pressure Metal Organic Chemical Vapour Deposition

AU - Zhao, Bai Jun

AU - Yang, Hong Jun

AU - Du, Guo Tong

AU - Miao, Guo Qing

AU - Yang, Tian Peng

AU - Zhang, Yuan Tao

AU - Gao, Zhong Min

AU - Wang, Jin Zhong

AU - Fang, Xiu Jun

AU - Liu, Da Li

AU - Li, Wan Cheng

AU - Ma, Yan

AU - Yang, Xiao Tian

AU - Liu, Bo Yang

PY - 2003/11

Y1 - 2003/11

N2 - ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al2O3 films and c-Al 2O3 substrates. The structure and optical properties of the ZnO/GaN/Al2O3 and ZnO/Al2O3 films have been investigated to determine the differences between the two substrates. ZnO films on GaN/Al2O3 show very strong emission features associated with exciton transitions, just as ZnO films on Al2O3, while the crystalline structural qualities for ZnO films on GaN/Al2O3 are much better than those for ZnO films directly grown on Al2O3 substrates. Zn and O elements in the deposited ZnO/GaN/Al2O3 and ZnO/Al 2O3 films are investigated and compared by x-ray photoelectron spectroscopy. According to the statistical results, the Zn/O ratio changes from Zn-rich for ZnO/Al2O3 films to O-rich for ZnO/GaN/Al2O3 films.

AB - ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al2O3 films and c-Al 2O3 substrates. The structure and optical properties of the ZnO/GaN/Al2O3 and ZnO/Al2O3 films have been investigated to determine the differences between the two substrates. ZnO films on GaN/Al2O3 show very strong emission features associated with exciton transitions, just as ZnO films on Al2O3, while the crystalline structural qualities for ZnO films on GaN/Al2O3 are much better than those for ZnO films directly grown on Al2O3 substrates. Zn and O elements in the deposited ZnO/GaN/Al2O3 and ZnO/Al 2O3 films are investigated and compared by x-ray photoelectron spectroscopy. According to the statistical results, the Zn/O ratio changes from Zn-rich for ZnO/Al2O3 films to O-rich for ZnO/GaN/Al2O3 films.

UR - https://www.scopus.com/pages/publications/0242575798

U2 - 10.1088/0256-307X/20/11/041

DO - 10.1088/0256-307X/20/11/041

M3 - 文章

AN - SCOPUS:0242575798

SN - 0256-307X

VL - 20

SP - 2045

EP - 2048

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 11

ER -

Comparative Study of Properties of ZnO/GaN/Al₂O₃ and ZnO/Al₂O₃ Films Grown by Low-Pressure Metal Organic Chemical Vapour Deposition

Abstract

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