Comparative study of epitaxial growth of Pt and Ir electrode films grown on MgO-buffered Si(100) by PLD

T. L. Chen; X. M. Li; S. Zhang; X. Zhang

doi:10.1007/s00339-004-2978-2

Comparative study of epitaxial growth of Pt and Ir electrode films grown on MgO-buffered Si(100) by PLD

T. L. Chen
, X. M. Li^*
, S. Zhang
, X. Zhang

^*Corresponding author for this work

CAS - Shanghai Institute of Ceramics
Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

(200)-oriented Pt and Ir electrode films have been epitaxially grown on MgO/Si(100) by in situ pulsed-laser deposition (PLD). A comparison of crystallinity and surface morphology of both electrode films was made. It was found that both electrode films featured remarkable atomic-scale smooth surfaces and had the same epitaxial relationship with substrates. Different from the noncompact surface morphology of the Pt film, the morphology of the Ir film offers a rectangular grain shape and the grains are arrayed regularly and compactly. The difference in the surface morphology of both electrode films is briefly explained in terms of the degree of species' saturation.

Original language	English
Pages (from-to)	73-76
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	80
Issue number	1
DOIs	https://doi.org/10.1007/s00339-004-2978-2
State	Published - Jan 2005
Externally published	Yes

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abstract = "(200)-oriented Pt and Ir electrode films have been epitaxially grown on MgO/Si(100) by in situ pulsed-laser deposition (PLD). A comparison of crystallinity and surface morphology of both electrode films was made. It was found that both electrode films featured remarkable atomic-scale smooth surfaces and had the same epitaxial relationship with substrates. Different from the noncompact surface morphology of the Pt film, the morphology of the Ir film offers a rectangular grain shape and the grains are arrayed regularly and compactly. The difference in the surface morphology of both electrode films is briefly explained in terms of the degree of species' saturation.",

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year = "2005",

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AU - Chen, T. L.

AU - Li, X. M.

AU - Zhang, S.

AU - Zhang, X.

PY - 2005/1

Y1 - 2005/1

N2 - (200)-oriented Pt and Ir electrode films have been epitaxially grown on MgO/Si(100) by in situ pulsed-laser deposition (PLD). A comparison of crystallinity and surface morphology of both electrode films was made. It was found that both electrode films featured remarkable atomic-scale smooth surfaces and had the same epitaxial relationship with substrates. Different from the noncompact surface morphology of the Pt film, the morphology of the Ir film offers a rectangular grain shape and the grains are arrayed regularly and compactly. The difference in the surface morphology of both electrode films is briefly explained in terms of the degree of species' saturation.

AB - (200)-oriented Pt and Ir electrode films have been epitaxially grown on MgO/Si(100) by in situ pulsed-laser deposition (PLD). A comparison of crystallinity and surface morphology of both electrode films was made. It was found that both electrode films featured remarkable atomic-scale smooth surfaces and had the same epitaxial relationship with substrates. Different from the noncompact surface morphology of the Pt film, the morphology of the Ir film offers a rectangular grain shape and the grains are arrayed regularly and compactly. The difference in the surface morphology of both electrode films is briefly explained in terms of the degree of species' saturation.

UR - https://www.scopus.com/pages/publications/10644259606

U2 - 10.1007/s00339-004-2978-2

DO - 10.1007/s00339-004-2978-2

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SN - 0947-8396

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JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

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ER -

Comparative study of epitaxial growth of Pt and Ir electrode films grown on MgO-buffered Si(100) by PLD

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