Chemical bonding of a-Ge1-xCx:H films grown by RF reactive sputtering

C. Q. Hu; W. T. Zheng; B. Zheng; J. J. Li; Z. S. Jin; X. M. Bai; H. W. Tian; Q. Jiang; X. Y. Wang; J. Q. Zhu; S. H. Meng; X. D. He; J. C. Han

doi:10.1016/j.vacuum.2004.08.004

Chemical bonding of a-Ge_1-xC_x:H films grown by RF reactive sputtering

C. Q. Hu
, W. T. Zheng^*
, B. Zheng
, J. J. Li
, Z. S. Jin
, X. M. Bai
, H. W. Tian
, Q. Jiang
, X. Y. Wang
, J. Q. Zhu
, S. H. Meng
, X. D. He
, J. C. Han

^*Corresponding author for this work

School of Astronautics

Jilin University

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Amorphous hydrogenated germanium-carbon (a-Ge_1-xC_x:H) films were deposited by RF reactive sputtering pure Ge (111) target at different flow rate ratios of CH₄/(CH₄ + Ar) in a discharge Ar/CH₄, and their composition and chemical bonding were investigated using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR). XPS and FTIR results showed the content of germanium in the films decreased with the increase of the flow rate ratio CH₄/(Ar + CH₄), and the Ge-C, Ge-H, C-H bonds were formed in the films. The fraction of Ge-C, Ge-H, and C-H bonds was strongly dependent on the flow rate ratio. Raman results indicated that the films also contain both Ge-Ge and C-C bonding. Based on the change of the chemical bonding of a-Ge_1-xC_x:H films with the flow rate ratio CH ₄/(CH₄ + Ar), an optimal experimental condition for the application of infrared windows was obtained.

Original language	English
Pages (from-to)	63-68
Number of pages	6
Journal	Vacuum
Volume	77
Issue number	1
DOIs	https://doi.org/10.1016/j.vacuum.2004.08.004
State	Published - 17 Dec 2004

Keywords

Chemical bonding
RF reactive sputtering
a-GeC:H films

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10.1016/j.vacuum.2004.08.004

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@article{d7ca83442aaf42e1aabbab619706a0fb,

title = "Chemical bonding of a-Ge1-xCx:H films grown by RF reactive sputtering",

abstract = "Amorphous hydrogenated germanium-carbon (a-Ge1-xCx:H) films were deposited by RF reactive sputtering pure Ge (111) target at different flow rate ratios of CH4/(CH4 + Ar) in a discharge Ar/CH4, and their composition and chemical bonding were investigated using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR). XPS and FTIR results showed the content of germanium in the films decreased with the increase of the flow rate ratio CH4/(Ar + CH4), and the Ge-C, Ge-H, C-H bonds were formed in the films. The fraction of Ge-C, Ge-H, and C-H bonds was strongly dependent on the flow rate ratio. Raman results indicated that the films also contain both Ge-Ge and C-C bonding. Based on the change of the chemical bonding of a-Ge1-xCx:H films with the flow rate ratio CH 4/(CH4 + Ar), an optimal experimental condition for the application of infrared windows was obtained.",

keywords = "Chemical bonding, RF reactive sputtering, a-GeC:H films",

author = "Hu, \{C. Q.\} and Zheng, \{W. T.\} and B. Zheng and Li, \{J. J.\} and Jin, \{Z. S.\} and Bai, \{X. M.\} and Tian, \{H. W.\} and Q. Jiang and Wang, \{X. Y.\} and Zhu, \{J. Q.\} and Meng, \{S. H.\} and He, \{X. D.\} and Han, \{J. C.\}",

year = "2004",

month = dec,

day = "17",

doi = "10.1016/j.vacuum.2004.08.004",

language = "英语",

volume = "77",

pages = "63--68",

journal = "Vacuum",

issn = "0042-207X",

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TY - JOUR

T1 - Chemical bonding of a-Ge1-xCx:H films grown by RF reactive sputtering

AU - Hu, C. Q.

AU - Zheng, W. T.

AU - Zheng, B.

AU - Li, J. J.

AU - Jin, Z. S.

AU - Bai, X. M.

AU - Tian, H. W.

AU - Jiang, Q.

AU - Wang, X. Y.

AU - Zhu, J. Q.

AU - Meng, S. H.

AU - He, X. D.

AU - Han, J. C.

PY - 2004/12/17

Y1 - 2004/12/17

N2 - Amorphous hydrogenated germanium-carbon (a-Ge1-xCx:H) films were deposited by RF reactive sputtering pure Ge (111) target at different flow rate ratios of CH4/(CH4 + Ar) in a discharge Ar/CH4, and their composition and chemical bonding were investigated using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR). XPS and FTIR results showed the content of germanium in the films decreased with the increase of the flow rate ratio CH4/(Ar + CH4), and the Ge-C, Ge-H, C-H bonds were formed in the films. The fraction of Ge-C, Ge-H, and C-H bonds was strongly dependent on the flow rate ratio. Raman results indicated that the films also contain both Ge-Ge and C-C bonding. Based on the change of the chemical bonding of a-Ge1-xCx:H films with the flow rate ratio CH 4/(CH4 + Ar), an optimal experimental condition for the application of infrared windows was obtained.

AB - Amorphous hydrogenated germanium-carbon (a-Ge1-xCx:H) films were deposited by RF reactive sputtering pure Ge (111) target at different flow rate ratios of CH4/(CH4 + Ar) in a discharge Ar/CH4, and their composition and chemical bonding were investigated using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR). XPS and FTIR results showed the content of germanium in the films decreased with the increase of the flow rate ratio CH4/(Ar + CH4), and the Ge-C, Ge-H, C-H bonds were formed in the films. The fraction of Ge-C, Ge-H, and C-H bonds was strongly dependent on the flow rate ratio. Raman results indicated that the films also contain both Ge-Ge and C-C bonding. Based on the change of the chemical bonding of a-Ge1-xCx:H films with the flow rate ratio CH 4/(CH4 + Ar), an optimal experimental condition for the application of infrared windows was obtained.

KW - Chemical bonding

KW - RF reactive sputtering

KW - a-GeC:H films

UR - https://www.scopus.com/pages/publications/9544228325

U2 - 10.1016/j.vacuum.2004.08.004

DO - 10.1016/j.vacuum.2004.08.004

M3 - 文章

AN - SCOPUS:9544228325

SN - 0042-207X

VL - 77

SP - 63

EP - 68

JO - Vacuum

JF - Vacuum

IS - 1

ER -

Chemical bonding of a-Ge_1-xC_x:H films grown by RF reactive sputtering

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