Chemical bonding and optoelectrical properties of ruthenium doped yttrium oxide thin films

Lei Yang; Jiecai Han; Jiaqi Zhu; Yuankun Zhu; H. Inaki Schlaberg

doi:10.1016/j.materresbull.2013.07.039

Chemical bonding and optoelectrical properties of ruthenium doped yttrium oxide thin films

Lei Yang
, Jiecai Han
, Jiaqi Zhu^*
, Yuankun Zhu
, H. Inaki Schlaberg

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology
North China Electric Power University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Highly infrared transparent conductive ruthenium doped yttrium oxide (RYO) films were deposited on zinc sulfide and glass substrates by reactive magnetron sputtering. The structural, optical, and electrical properties of the films as a function of growth temperature were studied. It is shown that the sputtered RYO thin films are amorphous and smooth surface is obtained. The infrared transmittance of the films increases with increasing the growth temperature. RYO films maintain greater than ∼65% transmittance over a wide wavelength range from 2.5 μm to 12 μm and the highest transmittance value reaches 73.3% at ∼10 μm. With increasing growth temperature, the resistivity changed in a wide range and lowest resistivity of about 3.36 × 10^-3 Ω cm is obtained at room temperature. The RYO thin films with high conductivity and transparency in IR spectral range would be suitable for infrared optical and electromagnetic shielding devices.

Original language	English
Pages (from-to)	4486-4490
Number of pages	5
Journal	Materials Research Bulletin
Volume	48
Issue number	11
DOIs	https://doi.org/10.1016/j.materresbull.2013.07.039
State	Published - 2013

Keywords

A. Oxides
A. Thin films
B. Optical properties
B. Sputtering
D. Electrical properties

Access to Document

10.1016/j.materresbull.2013.07.039

Cite this

@article{146a6840157f4632a4c85ab3973bed00,

title = "Chemical bonding and optoelectrical properties of ruthenium doped yttrium oxide thin films",

abstract = "Highly infrared transparent conductive ruthenium doped yttrium oxide (RYO) films were deposited on zinc sulfide and glass substrates by reactive magnetron sputtering. The structural, optical, and electrical properties of the films as a function of growth temperature were studied. It is shown that the sputtered RYO thin films are amorphous and smooth surface is obtained. The infrared transmittance of the films increases with increasing the growth temperature. RYO films maintain greater than ∼65\% transmittance over a wide wavelength range from 2.5 μm to 12 μm and the highest transmittance value reaches 73.3\% at ∼10 μm. With increasing growth temperature, the resistivity changed in a wide range and lowest resistivity of about 3.36 × 10-3 Ω cm is obtained at room temperature. The RYO thin films with high conductivity and transparency in IR spectral range would be suitable for infrared optical and electromagnetic shielding devices.",

keywords = "A. Oxides, A. Thin films, B. Optical properties, B. Sputtering, D. Electrical properties",

author = "Lei Yang and Jiecai Han and Jiaqi Zhu and Yuankun Zhu and Schlaberg, \{H. Inaki\}",

year = "2013",

doi = "10.1016/j.materresbull.2013.07.039",

language = "英语",

volume = "48",

pages = "4486--4490",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Ltd",

number = "11",

}

TY - JOUR

T1 - Chemical bonding and optoelectrical properties of ruthenium doped yttrium oxide thin films

AU - Yang, Lei

AU - Han, Jiecai

AU - Zhu, Jiaqi

AU - Zhu, Yuankun

AU - Schlaberg, H. Inaki

PY - 2013

Y1 - 2013

N2 - Highly infrared transparent conductive ruthenium doped yttrium oxide (RYO) films were deposited on zinc sulfide and glass substrates by reactive magnetron sputtering. The structural, optical, and electrical properties of the films as a function of growth temperature were studied. It is shown that the sputtered RYO thin films are amorphous and smooth surface is obtained. The infrared transmittance of the films increases with increasing the growth temperature. RYO films maintain greater than ∼65% transmittance over a wide wavelength range from 2.5 μm to 12 μm and the highest transmittance value reaches 73.3% at ∼10 μm. With increasing growth temperature, the resistivity changed in a wide range and lowest resistivity of about 3.36 × 10-3 Ω cm is obtained at room temperature. The RYO thin films with high conductivity and transparency in IR spectral range would be suitable for infrared optical and electromagnetic shielding devices.

AB - Highly infrared transparent conductive ruthenium doped yttrium oxide (RYO) films were deposited on zinc sulfide and glass substrates by reactive magnetron sputtering. The structural, optical, and electrical properties of the films as a function of growth temperature were studied. It is shown that the sputtered RYO thin films are amorphous and smooth surface is obtained. The infrared transmittance of the films increases with increasing the growth temperature. RYO films maintain greater than ∼65% transmittance over a wide wavelength range from 2.5 μm to 12 μm and the highest transmittance value reaches 73.3% at ∼10 μm. With increasing growth temperature, the resistivity changed in a wide range and lowest resistivity of about 3.36 × 10-3 Ω cm is obtained at room temperature. The RYO thin films with high conductivity and transparency in IR spectral range would be suitable for infrared optical and electromagnetic shielding devices.

KW - A. Oxides

KW - A. Thin films

KW - B. Optical properties

KW - B. Sputtering

KW - D. Electrical properties

UR - https://www.scopus.com/pages/publications/84883425166

U2 - 10.1016/j.materresbull.2013.07.039

DO - 10.1016/j.materresbull.2013.07.039

M3 - 文章

AN - SCOPUS:84883425166

SN - 0025-5408

VL - 48

SP - 4486

EP - 4490

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 11

ER -

Chemical bonding and optoelectrical properties of ruthenium doped yttrium oxide thin films

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this