Abstract
(K0.95Na0.05)1-3xLaxTa 0.60Nb0.40O3 ceramics (KNTN-La-x; x=0, 0.003, 0.007, and 0.01) were fabricated by the conventional solid-state method. The charge compensation mechanism was investigated by analyzing the current-voltage characteristics of the KNTN ceramics with various La doping contents. It was found that La doping induced semiconductivity in KNTN ceramics. This indicates the presence of the electronic compensation mechanism in La-doped KNTN ceramics, in addition to the well-studied ionic compensation mechanism. Further investigation revealed that the charge compensation mechanism could be altered by annealing, and that La was converted to become ionically compensated.
| Original language | English |
|---|---|
| Article number | 265305 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 47 |
| Issue number | 26 |
| DOIs | |
| State | Published - 2 Jul 2014 |
Keywords
- KNTN ceramics
- La-doping
- charge compensation
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