Abstract
The two-color recording sensitivity S and the figure of merit M# are measured in a reduced and congruent LiNbO3:In crystal of 2.2-mm thickness. The results are compared with those before reduction treatment. It is found that S increases by an order of magnitude through reduction treatment but the M# is unchanged. Measured values for S and M/# in the reduced crystal are found to be 3 × 103 cm/J and 0.04, respectively, with a total writing intensity of 4.0 W/cm2 at 780 nm and a gating intensity of 1.15 W/cm2 at 488 nm. These values are close to those of near-stoichiometric LiNbO3 crystals under similar recording conditions. We also show that photoconductivity plays an important role in the improvement of S in LiNbO3:In.
| Original language | English |
|---|---|
| Pages (from-to) | 5248-5252 |
| Number of pages | 5 |
| Journal | Applied Optics |
| Volume | 40 |
| Issue number | 29 |
| DOIs | |
| State | Published - 10 Oct 2001 |
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