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Characterization of oxygen vacancies and their migration in Ba-doped Pb(Zr0.52Ti0.48)O3 ferroelectrics

  • M. F. Zhang
  • , Y. Wang
  • , K. F. Wang
  • , J. S. Zhu
  • , J. M. Liu*
  • *Corresponding author for this work
  • Nanjing University
  • CAS - International Center for Material Physics

Research output: Contribution to journalArticlepeer-review

Abstract

We investigate in detail the migration kinetics of oxygen vacancies (OVs) in Ba-doped Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectrics by complex impedance spectroscopy. The temperature dependent dc-electrical conductivity σdc suggests that Ba doping into PZT can lower significantly the density of OVs, leading to the distinctly decreased σdc and slightly enhanced activation energy U for the migration of OVs, thus benefiting the polarization fatigue resistance. Furthermore, the polarization fluctuation induced by the relaxation of OVs is reduced by the Ba doping. The Cole-Cole fitting to the dielectric loss manifests strong correlation among OVs, and the migration of OVs appears to be a collective behavior.

Original languageEnglish
Article number061639
JournalJournal of Applied Physics
Volume105
Issue number6
DOIs
StatePublished - 2009

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