Characterization of mid-infrared silicon-on-sapphire microring resonators with thermal tuning

Chi Yan Wong; Zhenzhou Cheng; Xia Chen; Ke Xu; Christy K.Y. Fung; Yi Min Chen; Hon Ki Tsang

doi:10.1109/JPHOT.2012.2204734

Characterization of mid-infrared silicon-on-sapphire microring resonators with thermal tuning

Chi Yan Wong^*
, Zhenzhou Cheng
, Xia Chen
, Ke Xu
, Christy K.Y. Fung
, Yi Min Chen
, Hon Ki Tsang

^*Corresponding author for this work

Chinese University of Hong Kong

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Microring resonators on silicon-on-sapphire (SOS) were characterized at 2.75 μm wavelength. We obtained a Q factor of 11400 ± 800. The thermo-optic coefficient of epitaxial silicon of SOS wafer was measured to be 2.11 ± 0.08 × 10 ^-4 K ^-1. We also describe a characterization technique to measure the Q of microring resonators using a fixed wavelength source. By only varying the temperature of the device, it is possible to measure the Q of a mid-infrared (mid-IR) microresonator. The proposed method provides an alternative method of Q measurement for microring resonators in mid-IR, where tunable lasers may not be easily available. The technique was used to determine the Q of SOS microring resonators at 2.75 μm wavelength.

Original language	English
Article number	6217267
Pages (from-to)	1095-1102
Number of pages	8
Journal	IEEE Photonics Journal
Volume	4
Issue number	4
DOIs	https://doi.org/10.1109/JPHOT.2012.2204734
State	Published - 2012
Externally published	Yes

Keywords

Integrated nanophotonic systems
mid-infrared (mid-IR)
silicon nanophotonics
silicon-on-sapphire (SOS)
temperature
waveguide devices

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title = "Characterization of mid-infrared silicon-on-sapphire microring resonators with thermal tuning",

abstract = "Microring resonators on silicon-on-sapphire (SOS) were characterized at 2.75 μm wavelength. We obtained a Q factor of 11400 ± 800. The thermo-optic coefficient of epitaxial silicon of SOS wafer was measured to be 2.11 ± 0.08 × 10 -4 K -1. We also describe a characterization technique to measure the Q of microring resonators using a fixed wavelength source. By only varying the temperature of the device, it is possible to measure the Q of a mid-infrared (mid-IR) microresonator. The proposed method provides an alternative method of Q measurement for microring resonators in mid-IR, where tunable lasers may not be easily available. The technique was used to determine the Q of SOS microring resonators at 2.75 μm wavelength.",

keywords = "Integrated nanophotonic systems, mid-infrared (mid-IR), silicon nanophotonics, silicon-on-sapphire (SOS), temperature, waveguide devices",

author = "Wong, \{Chi Yan\} and Zhenzhou Cheng and Xia Chen and Ke Xu and Fung, \{Christy K.Y.\} and Chen, \{Yi Min\} and Tsang, \{Hon Ki\}",

year = "2012",

doi = "10.1109/JPHOT.2012.2204734",

language = "英语",

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pages = "1095--1102",

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AU - Wong, Chi Yan

AU - Cheng, Zhenzhou

AU - Chen, Xia

AU - Xu, Ke

AU - Fung, Christy K.Y.

AU - Chen, Yi Min

AU - Tsang, Hon Ki

PY - 2012

Y1 - 2012

N2 - Microring resonators on silicon-on-sapphire (SOS) were characterized at 2.75 μm wavelength. We obtained a Q factor of 11400 ± 800. The thermo-optic coefficient of epitaxial silicon of SOS wafer was measured to be 2.11 ± 0.08 × 10 -4 K -1. We also describe a characterization technique to measure the Q of microring resonators using a fixed wavelength source. By only varying the temperature of the device, it is possible to measure the Q of a mid-infrared (mid-IR) microresonator. The proposed method provides an alternative method of Q measurement for microring resonators in mid-IR, where tunable lasers may not be easily available. The technique was used to determine the Q of SOS microring resonators at 2.75 μm wavelength.

AB - Microring resonators on silicon-on-sapphire (SOS) were characterized at 2.75 μm wavelength. We obtained a Q factor of 11400 ± 800. The thermo-optic coefficient of epitaxial silicon of SOS wafer was measured to be 2.11 ± 0.08 × 10 -4 K -1. We also describe a characterization technique to measure the Q of microring resonators using a fixed wavelength source. By only varying the temperature of the device, it is possible to measure the Q of a mid-infrared (mid-IR) microresonator. The proposed method provides an alternative method of Q measurement for microring resonators in mid-IR, where tunable lasers may not be easily available. The technique was used to determine the Q of SOS microring resonators at 2.75 μm wavelength.

KW - Integrated nanophotonic systems

KW - mid-infrared (mid-IR)

KW - silicon nanophotonics

KW - silicon-on-sapphire (SOS)

KW - temperature

KW - waveguide devices

UR - https://www.scopus.com/pages/publications/84863482492

U2 - 10.1109/JPHOT.2012.2204734

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M3 - 文章

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SN - 1943-0655

VL - 4

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JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 4

M1 - 6217267

ER -

Characterization of mid-infrared silicon-on-sapphire microring resonators with thermal tuning

Abstract

Keywords

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