Characterization of interface of c-BN film deposited on silicon(100) substrate

Jingze Tian; Lifang Xia; Xinxin Ma; Yue Sun; Eung Sun Byon; Sung Hun Lee; Sang Ro Lee

doi:10.1016/S0040-6090(99)00504-0

Characterization of interface of c-BN film deposited on silicon(100) substrate

Jingze Tian
, Lifang Xia
, Xinxin Ma
, Yue Sun
, Eung Sun Byon
, Sung Hun Lee
, Sang Ro Lee

School of Materials Science and Engineering

Harbin Institute of Technology
Korea Institute of Machinery and Materials

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

The interfacial microstructure of cubic boron nitride (c-BN) film deposited on single silicon substrate using magnetically enhanced active reaction evaporation (ME-ARE) has been investigated through thinning methods, in which X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) absorption spectroscopy were used for compositional and microstructure analysis. c-BN film was etched at size 4×4 mm² by argon ion in XPS equipment to obtain depth concentration profile of the BN film and B1s XPS spectra at different etching depth. FTIR was alternately used to determine the microstructure of the BN film at different etching depth. The results show that a thin layer of hexagonal boron nitride (h-BN) phase exists at the interface between c-BN layer and substrate. In addition, transmission electron microscopy and selected area electron diffraction further confirm above the conclusion.

Original language	English
Pages (from-to)	229-232
Number of pages	4
Journal	Thin Solid Films
Volume	355
DOIs	https://doi.org/10.1016/S0040-6090(99)00504-0
State	Published - 1 Nov 1999
Event	Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA Duration: 12 Apr 1999 → 15 Apr 1999

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10.1016/S0040-6090(99)00504-0

Cite this

@article{f0ae1edada284a198a3ddd3239d3a0cd,

title = "Characterization of interface of c-BN film deposited on silicon(100) substrate",

abstract = "The interfacial microstructure of cubic boron nitride (c-BN) film deposited on single silicon substrate using magnetically enhanced active reaction evaporation (ME-ARE) has been investigated through thinning methods, in which X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) absorption spectroscopy were used for compositional and microstructure analysis. c-BN film was etched at size 4{\texttimes}4 mm2 by argon ion in XPS equipment to obtain depth concentration profile of the BN film and B1s XPS spectra at different etching depth. FTIR was alternately used to determine the microstructure of the BN film at different etching depth. The results show that a thin layer of hexagonal boron nitride (h-BN) phase exists at the interface between c-BN layer and substrate. In addition, transmission electron microscopy and selected area electron diffraction further confirm above the conclusion.",

author = "Jingze Tian and Lifang Xia and Xinxin Ma and Yue Sun and Byon, \{Eung Sun\} and Lee, \{Sung Hun\} and Lee, \{Sang Ro\}",

year = "1999",

month = nov,

day = "1",

doi = "10.1016/S0040-6090(99)00504-0",

language = "英语",

volume = "355",

pages = "229--232",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

note = "Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films ; Conference date: 12-04-1999 Through 15-04-1999",

}

TY - JOUR

T1 - Characterization of interface of c-BN film deposited on silicon(100) substrate

AU - Tian, Jingze

AU - Xia, Lifang

AU - Ma, Xinxin

AU - Sun, Yue

AU - Byon, Eung Sun

AU - Lee, Sung Hun

AU - Lee, Sang Ro

PY - 1999/11/1

Y1 - 1999/11/1

N2 - The interfacial microstructure of cubic boron nitride (c-BN) film deposited on single silicon substrate using magnetically enhanced active reaction evaporation (ME-ARE) has been investigated through thinning methods, in which X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) absorption spectroscopy were used for compositional and microstructure analysis. c-BN film was etched at size 4×4 mm2 by argon ion in XPS equipment to obtain depth concentration profile of the BN film and B1s XPS spectra at different etching depth. FTIR was alternately used to determine the microstructure of the BN film at different etching depth. The results show that a thin layer of hexagonal boron nitride (h-BN) phase exists at the interface between c-BN layer and substrate. In addition, transmission electron microscopy and selected area electron diffraction further confirm above the conclusion.

AB - The interfacial microstructure of cubic boron nitride (c-BN) film deposited on single silicon substrate using magnetically enhanced active reaction evaporation (ME-ARE) has been investigated through thinning methods, in which X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) absorption spectroscopy were used for compositional and microstructure analysis. c-BN film was etched at size 4×4 mm2 by argon ion in XPS equipment to obtain depth concentration profile of the BN film and B1s XPS spectra at different etching depth. FTIR was alternately used to determine the microstructure of the BN film at different etching depth. The results show that a thin layer of hexagonal boron nitride (h-BN) phase exists at the interface between c-BN layer and substrate. In addition, transmission electron microscopy and selected area electron diffraction further confirm above the conclusion.

UR - https://www.scopus.com/pages/publications/0033357945

U2 - 10.1016/S0040-6090(99)00504-0

DO - 10.1016/S0040-6090(99)00504-0

M3 - 会议文章

AN - SCOPUS:0033357945

SN - 0040-6090

VL - 355

SP - 229

EP - 232

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films

Y2 - 12 April 1999 through 15 April 1999

ER -

Characterization of interface of c-BN film deposited on silicon(100) substrate

Abstract

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