Abstract
Understanding the influences of lattice defect evolution on the optical properties of ZnO is of significance. To clarify this, we adopted typical treatments on ZnO using Al-H co-doping and post-annealing, combined with comprehensive characterization (absorption spectrum, Raman scattering, photoluminescence, electronic paramagnetic resonance and positron annihilation). The results reveal that the visible luminescence can arise from the V O, VZn and AlZn-Oi defects, while the defect centers responsible for the blue band optical absorption are assigned to ionized Zni and V+O. SEM images illustrated that H+ implantation diluted the ZnAl2O4 second phase, which reaccumulated after O2 annealing.
| Original language | English |
|---|---|
| Pages (from-to) | 8652-8656 |
| Number of pages | 5 |
| Journal | RSC Advances |
| Volume | 3 |
| Issue number | 23 |
| DOIs | |
| State | Published - 21 Jun 2013 |
| Externally published | Yes |
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