Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell

M. Heini; A. Aierken; Z. H. Li; X. F. Zhao; M. Sailai; X. B. Shen; Y. Xu; H. T. Liu; Y. D. Li; Q. Guo; C. M. Liu

doi:10.1063/1.5049367

Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell

M. Heini
, A. Aierken^*
, Z. H. Li
, X. F. Zhao
, M. Sailai
, X. B. Shen
, Y. Xu
, H. T. Liu
, Y. D. Li
, Q. Guo
, C. M. Liu

^*Corresponding author for this work

School of Astronautics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The changes in output parameters of 1 MeV electron irradiated MOCVD grown upright metamorphic (UMM) GaInP/GaInAs/Ge triple junction solar cells have been studied. Non-ionizing energy loss (NIEL) approach and MULASSIS simulation were applied for analyzing the effects of irradiation induced displacement damage on cell performance. The influence of base thickness on radiation resistance has been studied by changing the base thickness of top GaInP and middle GaInAs subcell, respectively. The experimental results show that the electrical parameters, V_oc, I_sc, and P_max of UMM cell degrade with the increase of electron fluence. The change of spectra response indicates middle GaInAs subcell degrades more severe than top GaInP subcells, and the base thickness of two subcells has different effects on spectra response of UMM cell.

Original language	English
Article number	105022
Journal	AIP Advances
Volume	8
Issue number	10
DOIs	https://doi.org/10.1063/1.5049367
State	Published - 1 Oct 2018

Access to Document

10.1063/1.5049367

Cite this

@article{b23ff669587b4ad4be25634c75123767,

title = "Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell",

abstract = "The changes in output parameters of 1 MeV electron irradiated MOCVD grown upright metamorphic (UMM) GaInP/GaInAs/Ge triple junction solar cells have been studied. Non-ionizing energy loss (NIEL) approach and MULASSIS simulation were applied for analyzing the effects of irradiation induced displacement damage on cell performance. The influence of base thickness on radiation resistance has been studied by changing the base thickness of top GaInP and middle GaInAs subcell, respectively. The experimental results show that the electrical parameters, Voc, Isc, and Pmax of UMM cell degrade with the increase of electron fluence. The change of spectra response indicates middle GaInAs subcell degrades more severe than top GaInP subcells, and the base thickness of two subcells has different effects on spectra response of UMM cell.",

author = "M. Heini and A. Aierken and Li, \{Z. H.\} and Zhao, \{X. F.\} and M. Sailai and Shen, \{X. B.\} and Y. Xu and Liu, \{H. T.\} and Li, \{Y. D.\} and Q. Guo and Liu, \{C. M.\}",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = oct,

day = "1",

doi = "10.1063/1.5049367",

language = "英语",

volume = "8",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell

AU - Heini, M.

AU - Aierken, A.

AU - Li, Z. H.

AU - Zhao, X. F.

AU - Sailai, M.

AU - Shen, X. B.

AU - Xu, Y.

AU - Liu, H. T.

AU - Li, Y. D.

AU - Guo, Q.

AU - Liu, C. M.

PY - 2018/10/1

Y1 - 2018/10/1

N2 - The changes in output parameters of 1 MeV electron irradiated MOCVD grown upright metamorphic (UMM) GaInP/GaInAs/Ge triple junction solar cells have been studied. Non-ionizing energy loss (NIEL) approach and MULASSIS simulation were applied for analyzing the effects of irradiation induced displacement damage on cell performance. The influence of base thickness on radiation resistance has been studied by changing the base thickness of top GaInP and middle GaInAs subcell, respectively. The experimental results show that the electrical parameters, Voc, Isc, and Pmax of UMM cell degrade with the increase of electron fluence. The change of spectra response indicates middle GaInAs subcell degrades more severe than top GaInP subcells, and the base thickness of two subcells has different effects on spectra response of UMM cell.

AB - The changes in output parameters of 1 MeV electron irradiated MOCVD grown upright metamorphic (UMM) GaInP/GaInAs/Ge triple junction solar cells have been studied. Non-ionizing energy loss (NIEL) approach and MULASSIS simulation were applied for analyzing the effects of irradiation induced displacement damage on cell performance. The influence of base thickness on radiation resistance has been studied by changing the base thickness of top GaInP and middle GaInAs subcell, respectively. The experimental results show that the electrical parameters, Voc, Isc, and Pmax of UMM cell degrade with the increase of electron fluence. The change of spectra response indicates middle GaInAs subcell degrades more severe than top GaInP subcells, and the base thickness of two subcells has different effects on spectra response of UMM cell.

UR - https://www.scopus.com/pages/publications/85055148875

U2 - 10.1063/1.5049367

DO - 10.1063/1.5049367

M3 - 文章

AN - SCOPUS:85055148875

SN - 2158-3226

VL - 8

JO - AIP Advances

JF - AIP Advances

IS - 10

M1 - 105022

ER -

Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell

Abstract

Access to Document

Other files and links

Fingerprint

Cite this