Abstract
We present here the results on the preparation and characterization of highly oriented ZnO microrods fabricated on SiC substrate via a vapor solid route. These ZnO microrods grow along the c-axis perpendicularly to the substrate and are well separated from each other. Photoluminescence (PL) due to the band-gap emission (centered at 380 nm) and defect-related deep band emission (centered at 530 nm) were observed. Tunable PL intensities of these two bands were achieved by acid etching for varying durations.
| Original language | English |
|---|---|
| Pages (from-to) | 6942-6945 |
| Number of pages | 4 |
| Journal | Journal of Alloys and Compounds |
| Volume | 509 |
| Issue number | 24 |
| DOIs | |
| State | Published - 16 Jun 2011 |
Keywords
- Microrod
- Photoluminescence
- Semiconducting materials
- ZnO
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