Carbon saturation of silicon target under the action of pulsed high-intensity ion beam

N. E. Aktaev; G. E. Remnev

doi:10.1088/1757-899X/110/1/012054

Carbon saturation of silicon target under the action of pulsed high-intensity ion beam

N. E. Aktaev
, G. E. Remnev

Tomsk Polytechnic University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.

Original language	English
Article number	012054
Journal	IOP Conference Series: Materials Science and Engineering
Volume	110
Issue number	1
DOIs	https://doi.org/10.1088/1757-899X/110/1/012054
State	Published - 23 Feb 2016
Externally published	Yes
Event	11th International Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials 2015, RTEP 2015 - Tomsk, Russian Federation Duration: 31 Aug 2015 → 10 Sep 2015

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abstract = "The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.",

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AU - Aktaev, N. E.

AU - Remnev, G. E.

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N2 - The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.

AB - The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.

UR - https://www.scopus.com/pages/publications/84971613761

U2 - 10.1088/1757-899X/110/1/012054

DO - 10.1088/1757-899X/110/1/012054

M3 - 会议文章

AN - SCOPUS:84971613761

SN - 1757-8981

VL - 110

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

IS - 1

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T2 - 11th International Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials 2015, RTEP 2015

Y2 - 31 August 2015 through 10 September 2015

ER -

Carbon saturation of silicon target under the action of pulsed high-intensity ion beam

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