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Buckling of Ge nanowires under uniaxial compression

  • Qingyuan Meng*
  • , Yuhang Jing
  • *Corresponding author for this work
  • Harbin Institute of Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Molecular dynamics simulations are performed to investigate the buckling properties of [100]-, [110]-, [111]-, and [112]-oriented single-crystalline germanium nanowires under uniaxial compression. The effects of simulation temperature, strain rate, and wire length on the buckling behaviour are investigated. The simulation results indicate that critical load clearly decreases with increasing temperature and with decreasing strain rate. Additionally, the present results show that the critical load decreases with the increase of wire length, which is in agreement with the Euler theory.

Original languageEnglish
Title of host publicationNanotechnology 2010
Subtitle of host publicationElectronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
Pages122-125
Number of pages4
StatePublished - 2010
EventNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 - Anaheim, CA, United States
Duration: 21 Jun 201024 Jun 2010

Publication series

NameNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
Volume2

Conference

ConferenceNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
Country/TerritoryUnited States
CityAnaheim, CA
Period21/06/1024/06/10

Keywords

  • Buckling
  • Compression
  • Ge nanowires
  • Molecular dynamics

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