Broadband antireflective Si nanopillar arrays produced by nanosphere lithography

Hongbo Xu; Nan Lu; Dianpeng Qi; Liguo Gao; Juanyuan Hao; Yandong Wang; Lifeng Chi

doi:10.1016/j.mee.2009.01.059

Broadband antireflective Si nanopillar arrays produced by nanosphere lithography

Hongbo Xu
, Nan Lu^*
, Dianpeng Qi
, Liguo Gao
, Juanyuan Hao
, Yandong Wang
, Lifeng Chi

^*Corresponding author for this work

Jilin University
University of Münster

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

In this work, we report an approach to fabricate Si nanopillar arrays by nanosphere lithography. With this method, the periods of Si arrays can be controlled by using different sized spheres. The produced Si arrays exhibit broadband antireflections, and the spectral positions with low reflection strongly depend on the periods of the arrays. Thus, the wavelength range of low reflection can be tuned by varying the period of Si array.

Original language	English
Pages (from-to)	850-852
Number of pages	3
Journal	Microelectronic Engineering
Volume	86
Issue number	4-6
DOIs	https://doi.org/10.1016/j.mee.2009.01.059
State	Published - Apr 2009
Externally published	Yes

Keywords

Broadband antireflective
Monolayer of spheres
Reactive ion etching
Si nanopillar arrays

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10.1016/j.mee.2009.01.059

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title = "Broadband antireflective Si nanopillar arrays produced by nanosphere lithography",

abstract = "In this work, we report an approach to fabricate Si nanopillar arrays by nanosphere lithography. With this method, the periods of Si arrays can be controlled by using different sized spheres. The produced Si arrays exhibit broadband antireflections, and the spectral positions with low reflection strongly depend on the periods of the arrays. Thus, the wavelength range of low reflection can be tuned by varying the period of Si array.",

keywords = "Broadband antireflective, Monolayer of spheres, Reactive ion etching, Si nanopillar arrays",

author = "Hongbo Xu and Nan Lu and Dianpeng Qi and Liguo Gao and Juanyuan Hao and Yandong Wang and Lifeng Chi",

year = "2009",

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doi = "10.1016/j.mee.2009.01.059",

language = "英语",

volume = "86",

pages = "850--852",

journal = "Microelectronic Engineering",

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T1 - Broadband antireflective Si nanopillar arrays produced by nanosphere lithography

AU - Xu, Hongbo

AU - Lu, Nan

AU - Qi, Dianpeng

AU - Gao, Liguo

AU - Hao, Juanyuan

AU - Wang, Yandong

AU - Chi, Lifeng

PY - 2009/4

Y1 - 2009/4

N2 - In this work, we report an approach to fabricate Si nanopillar arrays by nanosphere lithography. With this method, the periods of Si arrays can be controlled by using different sized spheres. The produced Si arrays exhibit broadband antireflections, and the spectral positions with low reflection strongly depend on the periods of the arrays. Thus, the wavelength range of low reflection can be tuned by varying the period of Si array.

AB - In this work, we report an approach to fabricate Si nanopillar arrays by nanosphere lithography. With this method, the periods of Si arrays can be controlled by using different sized spheres. The produced Si arrays exhibit broadband antireflections, and the spectral positions with low reflection strongly depend on the periods of the arrays. Thus, the wavelength range of low reflection can be tuned by varying the period of Si array.

KW - Broadband antireflective

KW - Monolayer of spheres

KW - Reactive ion etching

KW - Si nanopillar arrays

UR - https://www.scopus.com/pages/publications/67349264080

U2 - 10.1016/j.mee.2009.01.059

DO - 10.1016/j.mee.2009.01.059

M3 - 文章

AN - SCOPUS:67349264080

SN - 0167-9317

VL - 86

SP - 850

EP - 852

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4-6

ER -

Broadband antireflective Si nanopillar arrays produced by nanosphere lithography

Abstract

Keywords

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