Bi0.33(Bi6S9)Br compositing in Bi2S3 bulk materials forwards high thermoelectric properties

Jun Guo; Zi Yuan Wang; Lin Chen; Yu Ke Zhu; Ying Zhou; Quan Shan; Jing Feng; Zhen Hua Ge

doi:10.1039/d2cp02805k

Bi_0.33(Bi₆S₉)Br compositing in Bi₂S₃ bulk materials forwards high thermoelectric properties

Jun Guo
, Zi Yuan Wang
, Lin Chen
, Yu Ke Zhu
, Ying Zhou
, Quan Shan
, Jing Feng
, Zhen Hua Ge^*

^*Corresponding author for this work

Kunming University of Science and Technology
Yunnan Provincial Academy of Science and Technology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The hexagonal Bi_0.33(Bi₆S₉)Br intermediate was incorporated to enhance the thermoelectric properties of Bi₂S₃ by a facile synthesis process. As a result of the increase of carrier concentration caused by Br diffusion doping and the enhancement of phonon scattering caused by pores, point defects, and secondary phase interfaces, a maximum ZT value of 0.64 was achieved at 773 K in Bi₂S₃ + 5% Bi_0.33(Bi₆S₉)Br. This study provides a strategy for achieving Br doping in the Bi₂S₃ system by adding the Bi_0.33(Bi₆S₉)Br intermediate alloy, while the nanostructure was maintained in the matrix, which may be also suitable for other thermoelectric materials to obtain higher performance.

Original language	English
Pages (from-to)	24290-24295
Number of pages	6
Journal	Physical Chemistry Chemical Physics
Volume	24
Issue number	39
DOIs	https://doi.org/10.1039/d2cp02805k
State	Published - 29 Sep 2022
Externally published	Yes

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title = "Bi0.33(Bi6S9)Br compositing in Bi2S3 bulk materials forwards high thermoelectric properties",

abstract = "The hexagonal Bi0.33(Bi6S9)Br intermediate was incorporated to enhance the thermoelectric properties of Bi2S3 by a facile synthesis process. As a result of the increase of carrier concentration caused by Br diffusion doping and the enhancement of phonon scattering caused by pores, point defects, and secondary phase interfaces, a maximum ZT value of 0.64 was achieved at 773 K in Bi2S3 + 5\% Bi0.33(Bi6S9)Br. This study provides a strategy for achieving Br doping in the Bi2S3 system by adding the Bi0.33(Bi6S9)Br intermediate alloy, while the nanostructure was maintained in the matrix, which may be also suitable for other thermoelectric materials to obtain higher performance.",

author = "Jun Guo and Wang, \{Zi Yuan\} and Lin Chen and Zhu, \{Yu Ke\} and Ying Zhou and Quan Shan and Jing Feng and Ge, \{Zhen Hua\}",

note = "Publisher Copyright: {\textcopyright} 2022 The Royal Society of Chemistry.",

year = "2022",

month = sep,

day = "29",

doi = "10.1039/d2cp02805k",

language = "英语",

volume = "24",

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journal = "Physical Chemistry Chemical Physics",

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TY - JOUR

T1 - Bi0.33(Bi6S9)Br compositing in Bi2S3 bulk materials forwards high thermoelectric properties

AU - Guo, Jun

AU - Wang, Zi Yuan

AU - Chen, Lin

AU - Zhu, Yu Ke

AU - Zhou, Ying

AU - Shan, Quan

AU - Feng, Jing

AU - Ge, Zhen Hua

PY - 2022/9/29

Y1 - 2022/9/29

N2 - The hexagonal Bi0.33(Bi6S9)Br intermediate was incorporated to enhance the thermoelectric properties of Bi2S3 by a facile synthesis process. As a result of the increase of carrier concentration caused by Br diffusion doping and the enhancement of phonon scattering caused by pores, point defects, and secondary phase interfaces, a maximum ZT value of 0.64 was achieved at 773 K in Bi2S3 + 5% Bi0.33(Bi6S9)Br. This study provides a strategy for achieving Br doping in the Bi2S3 system by adding the Bi0.33(Bi6S9)Br intermediate alloy, while the nanostructure was maintained in the matrix, which may be also suitable for other thermoelectric materials to obtain higher performance.

AB - The hexagonal Bi0.33(Bi6S9)Br intermediate was incorporated to enhance the thermoelectric properties of Bi2S3 by a facile synthesis process. As a result of the increase of carrier concentration caused by Br diffusion doping and the enhancement of phonon scattering caused by pores, point defects, and secondary phase interfaces, a maximum ZT value of 0.64 was achieved at 773 K in Bi2S3 + 5% Bi0.33(Bi6S9)Br. This study provides a strategy for achieving Br doping in the Bi2S3 system by adding the Bi0.33(Bi6S9)Br intermediate alloy, while the nanostructure was maintained in the matrix, which may be also suitable for other thermoelectric materials to obtain higher performance.

UR - https://www.scopus.com/pages/publications/85139739774

U2 - 10.1039/d2cp02805k

DO - 10.1039/d2cp02805k

M3 - 文章

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AN - SCOPUS:85139739774

SN - 1463-9076

VL - 24

SP - 24290

EP - 24295

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

IS - 39

ER -

Bi_0.33(Bi₆S₉)Br compositing in Bi₂S₃ bulk materials forwards high thermoelectric properties

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