Abstract
Tb doped AlN semiconductors can be successfully synthesized by a facile solid state route. The as-synthesized AlN:Tb semiconductor exhibits strong green emission, showing potential utilization in solid light-emitting diodes. XRD, TEM and PL are employed to analyze the structure, morphology and photoluminescence properties of the samples. In addition, the hydrogen evolution induced by the UV-vis light of AlN:Tb is well investigated, showing an excellent photocatalytic property of 68 μmol g-1 h-1, which suggests that the AlN:Tb semiconductor is a promising material for photocatalysts for hydrogen evolution.
| Original language | English |
|---|---|
| Pages (from-to) | 90698-90704 |
| Number of pages | 7 |
| Journal | RSC Advances |
| Volume | 5 |
| Issue number | 110 |
| DOIs | |
| State | Published - 2015 |
| Externally published | Yes |
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