Bias influence on ionizing radiation effects for 3CG130 PNP bipolar junction transistors

Chaoming Liu; Xingji Li; Hongbin Geng; Dezhuang Yang; Shiyu He

doi:10.1016/j.nima.2011.12.011

Bias influence on ionizing radiation effects for 3CG130 PNP bipolar junction transistors

Chaoming Liu
, Xingji Li^*
, Hongbin Geng
, Dezhuang Yang
, Shiyu He

^*Corresponding author for this work

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In order to evaluate the influence of bias conditions on ionizing radiation effects for PNP bipolar junction transistors (BJTs), the 110 keV electrons irradiations were performed and different electrical parameters were measured in-situ for 3CG130 PNP BJTs with different bias conditions during the exposure. Based on the experimental results, it is clear that the bias condition affects the ionization damage level on PNP BJTs, which is caused by 110 keV electrons irradiations. The PNP transistors under reverse/forward bias of emitterbase junction exhibit greater/lower degradation than those under zero bias at a given irradiation fluence.

Original language	English
Pages (from-to)	6-9
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	670
DOIs	https://doi.org/10.1016/j.nima.2011.12.011
State	Published - 1 Apr 2012
Externally published	Yes

Keywords

Bias conditions
Bipolar junction transistors
Gain degradation
Ionizing effects
Lower energy electron

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10.1016/j.nima.2011.12.011

Cite this

@article{df88ac61df014c3a87f58a0e0c894ae0,

title = "Bias influence on ionizing radiation effects for 3CG130 PNP bipolar junction transistors",

abstract = "In order to evaluate the influence of bias conditions on ionizing radiation effects for PNP bipolar junction transistors (BJTs), the 110 keV electrons irradiations were performed and different electrical parameters were measured in-situ for 3CG130 PNP BJTs with different bias conditions during the exposure. Based on the experimental results, it is clear that the bias condition affects the ionization damage level on PNP BJTs, which is caused by 110 keV electrons irradiations. The PNP transistors under reverse/forward bias of emitterbase junction exhibit greater/lower degradation than those under zero bias at a given irradiation fluence.",

keywords = "Bias conditions, Bipolar junction transistors, Gain degradation, Ionizing effects, Lower energy electron",

author = "Chaoming Liu and Xingji Li and Hongbin Geng and Dezhuang Yang and Shiyu He",

year = "2012",

month = apr,

day = "1",

doi = "10.1016/j.nima.2011.12.011",

language = "英语",

volume = "670",

pages = "6--9",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

}

Bias influence on ionizing radiation effects for 3CG130 PNP bipolar junction transistors. / Liu, Chaoming ; Li, Xingji ; Geng, Hongbin et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 670, 01.04.2012, p. 6-9.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Bias influence on ionizing radiation effects for 3CG130 PNP bipolar junction transistors

AU - Liu, Chaoming

AU - Li, Xingji

AU - Geng, Hongbin

AU - Yang, Dezhuang

AU - He, Shiyu

PY - 2012/4/1

Y1 - 2012/4/1

N2 - In order to evaluate the influence of bias conditions on ionizing radiation effects for PNP bipolar junction transistors (BJTs), the 110 keV electrons irradiations were performed and different electrical parameters were measured in-situ for 3CG130 PNP BJTs with different bias conditions during the exposure. Based on the experimental results, it is clear that the bias condition affects the ionization damage level on PNP BJTs, which is caused by 110 keV electrons irradiations. The PNP transistors under reverse/forward bias of emitterbase junction exhibit greater/lower degradation than those under zero bias at a given irradiation fluence.

AB - In order to evaluate the influence of bias conditions on ionizing radiation effects for PNP bipolar junction transistors (BJTs), the 110 keV electrons irradiations were performed and different electrical parameters were measured in-situ for 3CG130 PNP BJTs with different bias conditions during the exposure. Based on the experimental results, it is clear that the bias condition affects the ionization damage level on PNP BJTs, which is caused by 110 keV electrons irradiations. The PNP transistors under reverse/forward bias of emitterbase junction exhibit greater/lower degradation than those under zero bias at a given irradiation fluence.

KW - Bias conditions

KW - Bipolar junction transistors

KW - Gain degradation

KW - Ionizing effects

KW - Lower energy electron

UR - https://www.scopus.com/pages/publications/84455167761

U2 - 10.1016/j.nima.2011.12.011

DO - 10.1016/j.nima.2011.12.011

M3 - 文章

AN - SCOPUS:84455167761

SN - 0168-9002

VL - 670

SP - 6

EP - 9

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Bias influence on ionizing radiation effects for 3CG130 PNP bipolar junction transistors

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Keywords

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