Ba(Zn1-2x Mnx Cux)2As2: A bulk form diluted ferromagnetic semiconductor with Mn and Cu codoping at Zn sites

Huiyuan Man; Shengli Guo; Yu Sui; Yang Guo; Bin Chen; Hangdong Wang; Cui Ding; F. L. Ning

doi:10.1038/srep15507

Ba(Zn_1-2x Mn_x Cu_x)₂As₂: A bulk form diluted ferromagnetic semiconductor with Mn and Cu codoping at Zn sites

Huiyuan Man
, Shengli Guo
, Yu Sui
, Yang Guo
, Bin Chen
, Hangdong Wang
, Cui Ding
, F. L. Ning^*

^*Corresponding author for this work

School of Physics

Zhejiang University
Collaborative Innovation Center of Advanced Microstructures
Hangzhou Normal University

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn_1-2x Mn_x Cu_x)₂ As₂ with the crystal structure identical to that of "122" family iron based superconductors and the antiferromagnet BaMn₂ As₂. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn₂ As₂. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below T_C ∼ 70K, followed by a magnetic glassy transition at T_f ∼ 35K. AC susceptibility measurements for Ba(Zn_0.75 Mn_0.125 Cu_0.125)₂ As₂ reveal that T f strongly depends on the applied frequency with and a DC magnetic field dependence of, demonstrating that a spin glass transition takes place at T f. As large as -53% negative magnetoresistance has been observed in Ba(Zn_1-2x Mn_x Cu_x)₂ As₂, enabling its possible application in memory devices.

Original language	English
Article number	15507
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep15507
State	Published - 23 Oct 2015

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title = "Ba(Zn1-2x Mnx Cux)2As2: A bulk form diluted ferromagnetic semiconductor with Mn and Cu codoping at Zn sites",

abstract = "We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn1-2x Mnx Cux)2 As2 with the crystal structure identical to that of {"}122{"} family iron based superconductors and the antiferromagnet BaMn2 As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2 As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ∼ 70K, followed by a magnetic glassy transition at Tf ∼ 35K. AC susceptibility measurements for Ba(Zn0.75 Mn0.125 Cu0.125)2 As2 reveal that T f strongly depends on the applied frequency with and a DC magnetic field dependence of, demonstrating that a spin glass transition takes place at T f. As large as -53\% negative magnetoresistance has been observed in Ba(Zn1-2x Mnx Cux)2 As2, enabling its possible application in memory devices.",

author = "Huiyuan Man and Shengli Guo and Yu Sui and Yang Guo and Bin Chen and Hangdong Wang and Cui Ding and Ning, \{F. L.\}",

year = "2015",

month = oct,

day = "23",

doi = "10.1038/srep15507",

language = "英语",

volume = "5",

journal = "Scientific Reports",

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TY - JOUR

T1 - Ba(Zn1-2x Mnx Cux)2As2

T2 - A bulk form diluted ferromagnetic semiconductor with Mn and Cu codoping at Zn sites

AU - Man, Huiyuan

AU - Guo, Shengli

AU - Sui, Yu

AU - Guo, Yang

AU - Chen, Bin

AU - Wang, Hangdong

AU - Ding, Cui

AU - Ning, F. L.

PY - 2015/10/23

Y1 - 2015/10/23

N2 - We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn1-2x Mnx Cux)2 As2 with the crystal structure identical to that of "122" family iron based superconductors and the antiferromagnet BaMn2 As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2 As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ∼ 70K, followed by a magnetic glassy transition at Tf ∼ 35K. AC susceptibility measurements for Ba(Zn0.75 Mn0.125 Cu0.125)2 As2 reveal that T f strongly depends on the applied frequency with and a DC magnetic field dependence of, demonstrating that a spin glass transition takes place at T f. As large as -53% negative magnetoresistance has been observed in Ba(Zn1-2x Mnx Cux)2 As2, enabling its possible application in memory devices.

AB - We report the synthesis and characterization of a bulk form diluted magnetic semiconductor Ba(Zn1-2x Mnx Cux)2 As2 with the crystal structure identical to that of "122" family iron based superconductors and the antiferromagnet BaMn2 As2. No ferromagnetic order occurs with (Zn, Mn) or (Zn, Cu) substitution in the parent compound BaZn2 As2. Only when Zn is substituted by both Mn and Cu simultaneously, can the system undergo a ferromagnetic transition below TC ∼ 70K, followed by a magnetic glassy transition at Tf ∼ 35K. AC susceptibility measurements for Ba(Zn0.75 Mn0.125 Cu0.125)2 As2 reveal that T f strongly depends on the applied frequency with and a DC magnetic field dependence of, demonstrating that a spin glass transition takes place at T f. As large as -53% negative magnetoresistance has been observed in Ba(Zn1-2x Mnx Cux)2 As2, enabling its possible application in memory devices.

UR - https://www.scopus.com/pages/publications/84945115506

U2 - 10.1038/srep15507

DO - 10.1038/srep15507

M3 - 文章

AN - SCOPUS:84945115506

SN - 2045-2322

VL - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 15507

ER -

Ba(Zn_1-2x Mn_x Cu_x)₂As₂: A bulk form diluted ferromagnetic semiconductor with Mn and Cu codoping at Zn sites

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