Abstract
Doping and alloying are pivotal methods for tailoring the properties of materials. Yet, the Hume-Rothery rule indicates that a significant atomic radius difference between the dopant and matrix atoms leads to low solubility, which limits the enhancement of material performance. Here, we propose a strategy to reduce the average atomic size mismatch ((Formula presented.)), thereby enhancing the solubility of insoluble elements. This strategy is demonstrated in sulfur-alloyed Bi2Te3, where co-alloying with Sb and Se reduces (Formula presented.), boosting the solubility of S from 3% to over 16% and effectively widening the bandgap. Meanwhile, configurational entropy enhancement via alloying induces lattice distortion, which significantly strengthens phonon scattering. Directional solidification is employed to form a near-single-crystal texture that boosts carrier mobility. As a result, an ultralow lattice thermal conductivity of 0.49 W m−1 K−1 at 423 K and a remarkable ZT of 0.92 at 450 K are achieved in n-type (Bi2Te3)0.8(Sb2Se2S)0.2. A segmented module realizes an exceptional conversion efficiency of 8.27% at a temperature difference of 290 K, surpassing that of the state-of-the-art Bi2Te3-based power generators. This work provides an effective strategy for enhancing the solubility of dopants, offering a pathway for the design of advanced material properties.
| Original language | English |
|---|---|
| Article number | e76361 |
| Journal | Advanced Functional Materials |
| Volume | 36 |
| Issue number | 53 |
| DOIs | |
| State | Published - 2 Jul 2026 |
Keywords
- average atomic size mismatch
- bismuth telluride
- solubility
- thermoelectric conversion
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