Atomically thin boron nitride nanodisks

Lu Hua Li; Ling Li; Xiujuan J. Dai; Ying Chen

doi:10.1016/j.matlet.2013.05.090

Atomically thin boron nitride nanodisks

Lu Hua Li^*
, Ling Li
, Xiujuan J. Dai
, Ying Chen

^*Corresponding author for this work

School of Astronautics

Deakin University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Boron nitride (BN) nanomaterials are of great scientific and technological interest. Here we report formation of BN nanodisks which are only 1-2 nm thick and have a relative uniform diameter of 30-40 nm. The nanodisks are produced on surfaces of BN nanosheets by argon plasma treatment at room temperature. The nanodisks show a polycrystalline structure and some levels of oxidation. It is found that the oxidation (patched BO bond) may serve as masks during the plasma etching and lead to the formation of the nanodisks.

Original language	English
Pages (from-to)	409-412
Number of pages	4
Journal	Materials Letters
Volume	106
DOIs	https://doi.org/10.1016/j.matlet.2013.05.090
State	Published - 2013

Keywords

Boron nitride (BN) nanodisks
NEXAFS
Nanosheets
Plasma

Access to Document

10.1016/j.matlet.2013.05.090

Cite this

@article{4c5b0c6c9e0d4ee5bd7d0c49d78538d7,

title = "Atomically thin boron nitride nanodisks",

abstract = "Boron nitride (BN) nanomaterials are of great scientific and technological interest. Here we report formation of BN nanodisks which are only 1-2 nm thick and have a relative uniform diameter of 30-40 nm. The nanodisks are produced on surfaces of BN nanosheets by argon plasma treatment at room temperature. The nanodisks show a polycrystalline structure and some levels of oxidation. It is found that the oxidation (patched BO bond) may serve as masks during the plasma etching and lead to the formation of the nanodisks.",

keywords = "Boron nitride (BN) nanodisks, NEXAFS, Nanosheets, Plasma",

author = "Li, \{Lu Hua\} and Ling Li and Dai, \{Xiujuan J.\} and Ying Chen",

year = "2013",

doi = "10.1016/j.matlet.2013.05.090",

language = "英语",

volume = "106",

pages = "409--412",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Atomically thin boron nitride nanodisks

AU - Li, Lu Hua

AU - Li, Ling

AU - Dai, Xiujuan J.

AU - Chen, Ying

PY - 2013

Y1 - 2013

N2 - Boron nitride (BN) nanomaterials are of great scientific and technological interest. Here we report formation of BN nanodisks which are only 1-2 nm thick and have a relative uniform diameter of 30-40 nm. The nanodisks are produced on surfaces of BN nanosheets by argon plasma treatment at room temperature. The nanodisks show a polycrystalline structure and some levels of oxidation. It is found that the oxidation (patched BO bond) may serve as masks during the plasma etching and lead to the formation of the nanodisks.

AB - Boron nitride (BN) nanomaterials are of great scientific and technological interest. Here we report formation of BN nanodisks which are only 1-2 nm thick and have a relative uniform diameter of 30-40 nm. The nanodisks are produced on surfaces of BN nanosheets by argon plasma treatment at room temperature. The nanodisks show a polycrystalline structure and some levels of oxidation. It is found that the oxidation (patched BO bond) may serve as masks during the plasma etching and lead to the formation of the nanodisks.

KW - Boron nitride (BN) nanodisks

KW - NEXAFS

KW - Nanosheets

KW - Plasma

UR - https://www.scopus.com/pages/publications/84879091437

U2 - 10.1016/j.matlet.2013.05.090

DO - 10.1016/j.matlet.2013.05.090

M3 - 文章

AN - SCOPUS:84879091437

SN - 0167-577X

VL - 106

SP - 409

EP - 412

JO - Materials Letters

JF - Materials Letters

ER -

Atomically thin boron nitride nanodisks

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this