TY - GEN
T1 - Assembly of a CNT-FET based on nanorobotic manipulation system inside a SEM
AU - Chen, Zhichao
AU - Yang, Zhan
AU - Chen, Tao
AU - Sun, Lining
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/10/21
Y1 - 2016/10/21
N2 - A method of assembling a multi-walled carbon-nanotube field effect transistor (CNT-FET) was presented in this paper. A nanorobotic manipulation system with 11 positioning degrees of freedom (DOFs) was used for the real time nanomanipulation. The nanorobotic manipulation system was constructed inside the scanning electron microscopy (SEM) specimen chamber to pick up a single MWCNT from MWCNT bulk without any other bounding except van der Waals force and assemble a CNT-FET with three AFM cantilevers, which were applied as gate, drain, source of CNT-FET respectively. An AFM cantilever (Olympus, OMCL-TR400PB-1) was etched to a gate electrode with a width of 2.00 μm and a length of 8.30 μm by a focused ion beam (FIB) process. A single multi-walled carbon-nanotube field (MWCNT), 51 nm in diameter, was used as conductive channel to accomplish the transport process of charge carriers between Source and Drain. Finally, a novel structure of CNT-FET was constructed in our experiments.
AB - A method of assembling a multi-walled carbon-nanotube field effect transistor (CNT-FET) was presented in this paper. A nanorobotic manipulation system with 11 positioning degrees of freedom (DOFs) was used for the real time nanomanipulation. The nanorobotic manipulation system was constructed inside the scanning electron microscopy (SEM) specimen chamber to pick up a single MWCNT from MWCNT bulk without any other bounding except van der Waals force and assemble a CNT-FET with three AFM cantilevers, which were applied as gate, drain, source of CNT-FET respectively. An AFM cantilever (Olympus, OMCL-TR400PB-1) was etched to a gate electrode with a width of 2.00 μm and a length of 8.30 μm by a focused ion beam (FIB) process. A single multi-walled carbon-nanotube field (MWCNT), 51 nm in diameter, was used as conductive channel to accomplish the transport process of charge carriers between Source and Drain. Finally, a novel structure of CNT-FET was constructed in our experiments.
KW - CNT-FET
KW - SEM
KW - nanorobotics
UR - https://www.scopus.com/pages/publications/84998842309
U2 - 10.1109/ICARM.2016.7606924
DO - 10.1109/ICARM.2016.7606924
M3 - 会议稿件
AN - SCOPUS:84998842309
T3 - ICARM 2016 - 2016 International Conference on Advanced Robotics and Mechatronics
SP - 231
EP - 236
BT - ICARM 2016 - 2016 International Conference on Advanced Robotics and Mechatronics
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2016 International Conference on Advanced Robotics and Mechatronics, ICARM 2016
Y2 - 18 August 2016 through 20 August 2016
ER -