Application of back bias to interdigital-electrode structured diamond UV detector showing enhanced responsivity

Kang Liu; Benjian Liu; Jiwen Zhao; Guoyang Shu; Xingchun Xu; Kaili Yao; Mingqi Sun; Xinyu Zhang; Yanan Yang; Zhenhua Su; Ge Gao; Lei Yang; Victor Ralchenko; Jiecai Han; Jiaqi Zhu; Bing Dai

doi:10.1016/j.sna.2019.03.033

Application of back bias to interdigital-electrode structured diamond UV detector showing enhanced responsivity

Kang Liu
, Benjian Liu
, Jiwen Zhao
, Guoyang Shu
, Xingchun Xu
, Kaili Yao
, Mingqi Sun
, Xinyu Zhang
, Yanan Yang
, Zhenhua Su
, Ge Gao
, Lei Yang
, Victor Ralchenko
, Jiecai Han
, Jiaqi Zhu^*
, Bing Dai

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology
Russian Academy of Sciences
Ministry of Education of the People's Republic of China

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

An interdigital electrode of 200-nm thickness, 160-μm spacing, and 160-μm width was fabricated on one side of a diamond fabricated by chemical vapor deposition. A gold contact of 200-nm thickness was deposited on the back side of the diamond. The back contact and one half of the interdigital electrode were connected by a switch. Higher responsivity and higher detectivity were observed when the back electrode contact was activated. The results of electrical field simulation showed that a stronger electrical field formed over the diamond region in the device with the back electrode than in that without the back electrode. This indicated that the detector performance improvement could be attributed to the higher carrier collection efficiency achieved with the back electrode, particularly under ultraviolet (UV) light at certain wavelengths, which have longer attenuation lengths in diamond. This structure could also be applied to UV detectors based on other wide-band-gap semiconductors.

Original language	English
Pages (from-to)	222-227
Number of pages	6
Journal	Sensors and Actuators A: Physical
Volume	290
DOIs	https://doi.org/10.1016/j.sna.2019.03.033
State	Published - 1 May 2019

Keywords

Back-contact electrode
CVD diamond
Photoresponse
UV detector

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10.1016/j.sna.2019.03.033

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@article{169cf41023c34a0caed547e513a9cf11,

title = "Application of back bias to interdigital-electrode structured diamond UV detector showing enhanced responsivity",

abstract = "An interdigital electrode of 200-nm thickness, 160-μm spacing, and 160-μm width was fabricated on one side of a diamond fabricated by chemical vapor deposition. A gold contact of 200-nm thickness was deposited on the back side of the diamond. The back contact and one half of the interdigital electrode were connected by a switch. Higher responsivity and higher detectivity were observed when the back electrode contact was activated. The results of electrical field simulation showed that a stronger electrical field formed over the diamond region in the device with the back electrode than in that without the back electrode. This indicated that the detector performance improvement could be attributed to the higher carrier collection efficiency achieved with the back electrode, particularly under ultraviolet (UV) light at certain wavelengths, which have longer attenuation lengths in diamond. This structure could also be applied to UV detectors based on other wide-band-gap semiconductors.",

keywords = "Back-contact electrode, CVD diamond, Photoresponse, UV detector",

author = "Kang Liu and Benjian Liu and Jiwen Zhao and Guoyang Shu and Xingchun Xu and Kaili Yao and Mingqi Sun and Xinyu Zhang and Yanan Yang and Zhenhua Su and Ge Gao and Lei Yang and Victor Ralchenko and Jiecai Han and Jiaqi Zhu and Bing Dai",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

month = may,

day = "1",

doi = "10.1016/j.sna.2019.03.033",

language = "英语",

volume = "290",

pages = "222--227",

journal = "Sensors and Actuators A: Physical",

issn = "0924-4247",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Application of back bias to interdigital-electrode structured diamond UV detector showing enhanced responsivity

AU - Liu, Kang

AU - Liu, Benjian

AU - Zhao, Jiwen

AU - Shu, Guoyang

AU - Xu, Xingchun

AU - Yao, Kaili

AU - Sun, Mingqi

AU - Zhang, Xinyu

AU - Yang, Yanan

AU - Su, Zhenhua

AU - Gao, Ge

AU - Yang, Lei

AU - Ralchenko, Victor

AU - Han, Jiecai

AU - Zhu, Jiaqi

AU - Dai, Bing

PY - 2019/5/1

Y1 - 2019/5/1

N2 - An interdigital electrode of 200-nm thickness, 160-μm spacing, and 160-μm width was fabricated on one side of a diamond fabricated by chemical vapor deposition. A gold contact of 200-nm thickness was deposited on the back side of the diamond. The back contact and one half of the interdigital electrode were connected by a switch. Higher responsivity and higher detectivity were observed when the back electrode contact was activated. The results of electrical field simulation showed that a stronger electrical field formed over the diamond region in the device with the back electrode than in that without the back electrode. This indicated that the detector performance improvement could be attributed to the higher carrier collection efficiency achieved with the back electrode, particularly under ultraviolet (UV) light at certain wavelengths, which have longer attenuation lengths in diamond. This structure could also be applied to UV detectors based on other wide-band-gap semiconductors.

AB - An interdigital electrode of 200-nm thickness, 160-μm spacing, and 160-μm width was fabricated on one side of a diamond fabricated by chemical vapor deposition. A gold contact of 200-nm thickness was deposited on the back side of the diamond. The back contact and one half of the interdigital electrode were connected by a switch. Higher responsivity and higher detectivity were observed when the back electrode contact was activated. The results of electrical field simulation showed that a stronger electrical field formed over the diamond region in the device with the back electrode than in that without the back electrode. This indicated that the detector performance improvement could be attributed to the higher carrier collection efficiency achieved with the back electrode, particularly under ultraviolet (UV) light at certain wavelengths, which have longer attenuation lengths in diamond. This structure could also be applied to UV detectors based on other wide-band-gap semiconductors.

KW - Back-contact electrode

KW - CVD diamond

KW - Photoresponse

KW - UV detector

UR - https://www.scopus.com/pages/publications/85063529697

U2 - 10.1016/j.sna.2019.03.033

DO - 10.1016/j.sna.2019.03.033

M3 - 文章

AN - SCOPUS:85063529697

SN - 0924-4247

VL - 290

SP - 222

EP - 227

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

ER -

Application of back bias to interdigital-electrode structured diamond UV detector showing enhanced responsivity

Abstract

Keywords

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