Antisolvent temperature engineering enables rapid nucleation for efficient red perovskite light-emitting diodes

Quasi-two-dimensional (quasi-2D) perovskite light-emitting diodes (PeLEDs) exhibit remarkable optoelectronic properties, yet perovskite film quality and PeLEDs performance are highly sensitive to crystallization kinetics governed by antisolvent treatment. However, the effect of antisolvent temperature on the nucleation and crystallization of quasi-2D perovskite films has not been investigated. This study systematically investigates the previously overlooked role of antisolvent temperature in modulating nucleation and crystallization processes. High-temperature antisolvent treatment effectively facilitates the nucleation rate and slows down the crystallization rate, promoting the formation of uniform and homogeneous perovskite films. The balanced rate between nucleation and growth processes improves the crystallinity and radiative recombination efficiency simultaneously. As a result, with an appropriate temperature (60 °C) antisolvent treatment, the maximum external quantum efficiency (EQE) of quasi-2D PeLEDs increases from 19.2% (ambient temperature antisolvent) to 24.2%. In addition, the optimized PeLEDs demonstrate improved operational stability and higher color purity compared with other counterparts. This approach offers a straightforward yet effective alternative to complex compositional or interfacial engineering, highlighting the critical role of thermal management in antisolvent processing for high-performance PeLEDs.