Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20 MeV Br ions

Chaoming Liu; Xingji Li; Jianqun Yang; Joachim Bollmann

doi:10.1016/j.nima.2013.10.017

Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20 MeV Br ions

Chaoming Liu
, Xingji Li^*
, Jianqun Yang
, Joachim Bollmann

^*Corresponding author for this work

Harbin Institute of Technology
Freiberg University of Mining and Technology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Isochronal anneal sequences have been carried out on 3CG130 silicon PNP bipolar junction transistors (BJTs) irradiated with 20 MeV bromine (Br) heavy ions. The Gummel curve was utilized to characterize the annealing behavior of defects in both the emitter-base depletion region and the neutral base. The results show that the base current (I_B) decreases with the increasing annealing temperature, while the collector current (I_C) keeps invariably. The current gain varies slightly, when the annealing temperature (T_A) is lower than 500 K, while varies rapidly at T _A>550 K, and the current gain of the 3CG130 BJT annealing at 700 K almost restore to that of the pre-radiation transistor. The deep level transient spectroscopy (DLTS) data was used to assign the relative magnitude of each of the important defects. Based on the in situ electrical measurement and DLTS spectra, it is clear that the V₂(+/0) trap is the main contribution to the degradation of current gain after the 20 MeV Br ions irradiation. The V₂(+/0) peak has many characteristics expected for the current gain degradation.

Original language	English
Pages (from-to)	462-465
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	735
DOIs	https://doi.org/10.1016/j.nima.2013.10.017
State	Published - 2014
Externally published	Yes

Keywords

Annealing effects
Bipolar junction transistors
Gain degradation
Heavy ions

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10.1016/j.nima.2013.10.017

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@article{f5e7241d8f0d45dbb9cebc6d484c83ec,

title = "Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20 MeV Br ions",

abstract = "Isochronal anneal sequences have been carried out on 3CG130 silicon PNP bipolar junction transistors (BJTs) irradiated with 20 MeV bromine (Br) heavy ions. The Gummel curve was utilized to characterize the annealing behavior of defects in both the emitter-base depletion region and the neutral base. The results show that the base current (IB) decreases with the increasing annealing temperature, while the collector current (IC) keeps invariably. The current gain varies slightly, when the annealing temperature (TA) is lower than 500 K, while varies rapidly at T A>550 K, and the current gain of the 3CG130 BJT annealing at 700 K almost restore to that of the pre-radiation transistor. The deep level transient spectroscopy (DLTS) data was used to assign the relative magnitude of each of the important defects. Based on the in situ electrical measurement and DLTS spectra, it is clear that the V2(+/0) trap is the main contribution to the degradation of current gain after the 20 MeV Br ions irradiation. The V2(+/0) peak has many characteristics expected for the current gain degradation.",

keywords = "Annealing effects, Bipolar junction transistors, Gain degradation, Heavy ions",

author = "Chaoming Liu and Xingji Li and Jianqun Yang and Joachim Bollmann",

year = "2014",

doi = "10.1016/j.nima.2013.10.017",

language = "英语",

volume = "735",

pages = "462--465",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

publisher = "Elsevier B.V.",

}

Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20 MeV Br ions. / Liu, Chaoming ; Li, Xingji ; Yang, Jianqun et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 735, 2014, p. 462-465.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20 MeV Br ions

AU - Liu, Chaoming

AU - Li, Xingji

AU - Yang, Jianqun

AU - Bollmann, Joachim

PY - 2014

Y1 - 2014

N2 - Isochronal anneal sequences have been carried out on 3CG130 silicon PNP bipolar junction transistors (BJTs) irradiated with 20 MeV bromine (Br) heavy ions. The Gummel curve was utilized to characterize the annealing behavior of defects in both the emitter-base depletion region and the neutral base. The results show that the base current (IB) decreases with the increasing annealing temperature, while the collector current (IC) keeps invariably. The current gain varies slightly, when the annealing temperature (TA) is lower than 500 K, while varies rapidly at T A>550 K, and the current gain of the 3CG130 BJT annealing at 700 K almost restore to that of the pre-radiation transistor. The deep level transient spectroscopy (DLTS) data was used to assign the relative magnitude of each of the important defects. Based on the in situ electrical measurement and DLTS spectra, it is clear that the V2(+/0) trap is the main contribution to the degradation of current gain after the 20 MeV Br ions irradiation. The V2(+/0) peak has many characteristics expected for the current gain degradation.

AB - Isochronal anneal sequences have been carried out on 3CG130 silicon PNP bipolar junction transistors (BJTs) irradiated with 20 MeV bromine (Br) heavy ions. The Gummel curve was utilized to characterize the annealing behavior of defects in both the emitter-base depletion region and the neutral base. The results show that the base current (IB) decreases with the increasing annealing temperature, while the collector current (IC) keeps invariably. The current gain varies slightly, when the annealing temperature (TA) is lower than 500 K, while varies rapidly at T A>550 K, and the current gain of the 3CG130 BJT annealing at 700 K almost restore to that of the pre-radiation transistor. The deep level transient spectroscopy (DLTS) data was used to assign the relative magnitude of each of the important defects. Based on the in situ electrical measurement and DLTS spectra, it is clear that the V2(+/0) trap is the main contribution to the degradation of current gain after the 20 MeV Br ions irradiation. The V2(+/0) peak has many characteristics expected for the current gain degradation.

KW - Annealing effects

KW - Bipolar junction transistors

KW - Gain degradation

KW - Heavy ions

UR - https://www.scopus.com/pages/publications/84886678551

U2 - 10.1016/j.nima.2013.10.017

DO - 10.1016/j.nima.2013.10.017

M3 - 文章

AN - SCOPUS:84886678551

SN - 0168-9002

VL - 735

SP - 462

EP - 465

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20 MeV Br ions

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