Analytical model for capacitance-voltage characteristics of ion-implanted 4H silicon carbide Schottky barrier diodes

In order to undertake theory analysis in the application area of switching, frequency and power devices, an analytical model for capacitance-voltage (C-V) characteristics of ion-implanted 4H silicon carbide (SiC) Schottky barrier diodes (SBDs) was investigated. This model was established by considering the effects of incomplete ionization of nitrogen in 4H-SiC, the Poole-Frenkel on the ionization energy, and the ion-implanted nitrogen donor profiles. The simulation process is discussed in detail for two multiple nitrogen ion-implanted 4H-SiC SBDs (three and four fold ion-implantations) designed and fabricated in the experiments using this model at different activation rates. An agreement between the modeled C-V curves and the measured results for two ion-implanted 4H-SiC SBDs fabricated is shown. This capacitance model has the potential to be used to simulate and design ion-implanted SiC devices concerned in the future.