TY - GEN
T1 - Analysis of the influence of single event effects on the characteristics for SiC power MOSFETs
AU - Li, Pengwei
AU - Zeng, Liang
AU - Li, Xingji
AU - Luo, Lei
AU - Zhang, Hongwei
AU - Bo, Mei
AU - Sun, Yi
AU - Yu, Qingkui
AU - Tang, Min
AU - Xu, Weixin
AU - Zhang, Baocai
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/10/20
Y1 - 2017/10/20
N2 - Because of properties of high speed, high breakdown voltage, low leakage current and high temperature resistance, silicon carbide (SiC) power devices can be used as processing units in advanced space high-power power system and high temperature propulsion power. However, the single event gate-rupture and burn-out on silicon carbide (SiC) power devices is main problem in space application for its high voltage when comes to radiation particles, such as SiC power MOSFETs. For the safe operation of SiC power MOSFETs in space, the Safe Operating Area (SOA) must be confirmed. In this paper, the single event effects testing of SiC power MOSFETs devices under different drain-source voltages are studied. It was found that the threshold voltage of the devices reduced and the drain-source voltage increased after the single event effect testing. Based on the analysis of different testing data, The safe operating voltage of the device is obtained. The the Drain-Source on-State resistance characteristics from being tested samples were provided. Suggestion on SiC power MOSFETs devices for space application was given at last.
AB - Because of properties of high speed, high breakdown voltage, low leakage current and high temperature resistance, silicon carbide (SiC) power devices can be used as processing units in advanced space high-power power system and high temperature propulsion power. However, the single event gate-rupture and burn-out on silicon carbide (SiC) power devices is main problem in space application for its high voltage when comes to radiation particles, such as SiC power MOSFETs. For the safe operation of SiC power MOSFETs in space, the Safe Operating Area (SOA) must be confirmed. In this paper, the single event effects testing of SiC power MOSFETs devices under different drain-source voltages are studied. It was found that the threshold voltage of the devices reduced and the drain-source voltage increased after the single event effect testing. Based on the analysis of different testing data, The safe operating voltage of the device is obtained. The the Drain-Source on-State resistance characteristics from being tested samples were provided. Suggestion on SiC power MOSFETs devices for space application was given at last.
KW - output characteristics
KW - safe operating voltage
KW - silicon carbide power MOSFETs
KW - single event burn-out
KW - single event gate-rupture
KW - space application
UR - https://www.scopus.com/pages/publications/85039951847
U2 - 10.1109/PHM.2017.8079302
DO - 10.1109/PHM.2017.8079302
M3 - 会议稿件
AN - SCOPUS:85039951847
T3 - 2017 Prognostics and System Health Management Conference, PHM-Harbin 2017 - Proceedings
BT - 2017 Prognostics and System Health Management Conference, PHM-Harbin 2017 - Proceedings
A2 - Zhang, Bin
A2 - Peng, Yu
A2 - Liao, Haitao
A2 - Liu, Datong
A2 - Wang, Shaojun
A2 - Miao, Qiang
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 8th IEEE Prognostics and System Health Management Conference, PHM-Harbin 2017
Y2 - 9 July 2017 through 12 July 2017
ER -