@inproceedings{8ec9e1f02d074e04a7a9a413762feafe,
title = "Analysis of SiC Output Capacitance Effects on Soft-Switching Characteristics in Three-Level Resonant Converters",
abstract = "To address the high power density and high efficiency requirements of isolated DC/DC converters in novel power load systems, this paper investigates the soft-switching characteristics of a silicon carbide SiC-based three-level resonant converter. Through modal analysis, the influence mechanism of power device output capacitance parameters on soft-switching behavior is revealed. By comparing the impact of the presence and absence of secondary-side switch output capacitance on the soft-switching of primary-side switches, it is found that the magnetizing current required for soft-switching increases when considering the output capacitance, leading to higher conduction losses. The correctness of the magnetizing current calculation is validated through simulations. Experimental verification is conducted on a 2300V DC input / 900V DC output / 25kW prototype, demonstrating the effectiveness of the proposed design.",
keywords = "high power density, silicon carbide MOSFET, soft-switching, three-level NPC",
author = "Zhe Shao and Zhiyuan Wang and Binbin Li",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025 ; Conference date: 15-08-2025 Through 17-08-2025",
year = "2025",
doi = "10.1109/WiPDA-Asia63772.2025.11183926",
language = "英语",
series = "2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2025 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2025",
address = "美国",
}