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Analysis and Reduction Methods for Floating Potential and Voltage Stress in IPT System

  • School of Electrical Engineering and Automation, Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

In high-power inductive power transfer (IPT) systems, kilovolt-level winding voltages can induce hazardous floating potentials on ungrounded ferrites and aluminum shielding structures, thereby degrading insulation reliability and increasing the risk of electrical breakdown. To investigate this issue, a distributed-parameter model incorporating partial inductances and parasitic capacitances was developed to analyze the floating-potential coupling mechanism in magnetic couplers. Based on the proposed model, the effects of parasitic-capacitance distribution on floating potentials were investigated through finite-element analysis (FEA) and experiments. To intrinsically suppress floating potentials, a distributed compensation topology with a parallel-wound single-layer winding structure was proposed. By symmetrically balancing winding-terminal potentials and distributing compensation capacitors, the proposed topology significantly reduced floating potentials and winding voltage stress. Experimental results demonstrated that the ferrite and aluminum-shield potentials were reduced to 4% of the inverter output potential, the maximum ground-referenced voltage was reduced by 71%, and the winding-terminal voltage stress was reduced by 52%, accompanied by reduced dielectric loss associated with parasitic capacitive coupling. Experimental verification using an 80-kW prototype further confirmed the feasibility of the proposed method for high-power IPT systems.

Original languageEnglish
Pages (from-to)18769-18778
Number of pages10
JournalIEEE Transactions on Power Electronics
Volume41
Issue number10
DOIs
StateAccepted/In press - 2026
Externally publishedYes

Keywords

  • Floating potential
  • inductive power transfer (IPT)
  • parasitic capacitance
  • partial inductance
  • voltage stress

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