An Oscillation-Free Active Gate Driver with Self-Adaptive Overshoot Control for SiC MOSFETs

Compared with silicon-based metal–oxide-semiconductor field-effect transistors (MOSFETs), silicon carbide (SiC) MOSFETs enable higher efficiency and power density in power converters owing to their fast switching capability and high operating frequency. However, the parasitic inductances in the power loop introduce severe voltage overshoot and oscillations during the turn-off transient, degrading device reliability and generating significant electromagnetic interference (EMI). To address these challenges, this article proposes an active gate driver (AGD) that achieves oscillation-free turn-off, along with a self-adaptive overshoot control strategy. By dynamically regulating the gate current profile, the proposed strategy enables precise adjustment of the overshoot voltage to a predefined range, ensuring stable and reliable operation under varying conditions. A comprehensive experimental platform is established to validate the proposed approach. Three distinct types of SiC MOSFETs are evaluated under operating conditions of 600 V/50 A, 100 A, and 200 A, respectively. In addition, a dynamic load variation from 600 V/50 A to 600 V/200 A is conducted to further assess the robustness of the proposed strategy. Experimental results demonstrate that the proposed AGD effectively suppresses voltage overshoot and eliminates oscillations while maintaining stable switching characteristics. Furthermore, the self-adaptive control strategy enables cycle-by cycle regulation, achieving robust and oscillation-free operation across a wide range of operating conditions.