Skip to main navigation Skip to search Skip to main content

An optimized process of high-performance integrated passive devices (IPDs) on SI-GaAs substrate for RF applications

  • Kwangwoon University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An integrated passive device (IPD) technology by semi-insulating (SI) GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction for RF and microwave applications. In this paper, we develop an advanced optimized process for realizing IPDs to reduce fabrication time and total cost and to increase RF performances. The critical characteristics of lumped elements thin film resistor (TFR), spiral inductor and metal-insulator-metal (MIM) capacitor are optimized in this advanced process. A low-pass filter (LPF) for global system for mobile communications (GSM) is demonstrated by using this IPD process; it shows very good RF performances in spite of its small chip size and low cost, when compared with the recently reported literature.

Original languageEnglish
Title of host publication2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
Pages116-118
Number of pages3
DOIs
StatePublished - 2013
Externally publishedYes
Event2013 3rd Asia-Pacific Microwave Conference, APMC 2013 - Seoul, Korea, Republic of
Duration: 5 Nov 20138 Nov 2013

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2013 3rd Asia-Pacific Microwave Conference, APMC 2013
Country/TerritoryKorea, Republic of
CitySeoul
Period5/11/138/11/13

Keywords

  • Integrated passive device (IPD)
  • Process optimization
  • SU-8 photo-resist (PR)
  • Si-GaAs substrate
  • low-pass filter (LPF)

Fingerprint

Dive into the research topics of 'An optimized process of high-performance integrated passive devices (IPDs) on SI-GaAs substrate for RF applications'. Together they form a unique fingerprint.

Cite this