An Investigation into the Safe Operating Area of SiC MOSFET Considering Crosstalk

SiC MOSFETs exhibit characteristics such as high switching speed, high voltage tolerance, and high temperature resistance, which makes it widely applicable in half-bridge configurations. However, the issue of crosstalk in the arms of the half-bridge significantly affects its application. Positive and negative crosstalk can potentially lead to circuit short circuits or reverse breakdown, which significantly impacts the stability and reliability of electronic systems. Current research on SiC MOSFET crosstalk primarily focuses on mechanism modeling and suppression techniques, yet it has not been incorporated into the consideration of safe operating areas. This paper investigates crosstalk as a limiting factor in the safe operating area of SiC MOSFETs, analyzing the mechanisms and models of crosstalk. Furthermore, through an experimental platform, it explores the crosstalk safe operating area under varying drain-source voltage change rate and gate resistor. Experimental results indicate that the crosstalk voltage and breakdown current exhibit significant variation with increasing drain-source voltage rates and gate resistances. Based on this, the paper comprehensively analyzes the influencing factors of crosstalk and delineates the safe operating areas for both positive and negative crosstalk, providing a theoretical basis and practical guidance for the reliable application of SiC MOSFETs.