TY - GEN
T1 - An Accelerated Lifetime Model of SiC MOSFETs Considering Distribution Characteristics
AU - Wang, Haodong
AU - Wang, Chenyi
AU - Wang, Zicheng
AU - Guo, Yi
AU - Gao, Junpeng
AU - Zhai, Guofu
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - Although SiC MOSFETs, as third-generation semiconductor devices, have shown significant advantages in breakdown voltage, switching frequency, and other performance, their reliability issues are also more prominent. Power cycling tests is the most common testing method for studying the packaging reliability of SiC MOSFETs. Researchers have conducted extensive power cycling tests on SiC MOSFETs, but the steps of reliability calculation and lifetime prediction based on the existing accelerated lifetime models are complex. This method consists of two parts. Firstly, the structure of the accelerated lifetime model is constructed by combining the Coffin-Manson model and Weibull distribution. Secondly, the likelihood equation systems are derived for both complete data and right censored data. In addition, the accelerated lifetime model is established based on power cycling tests, and the predicted reliability curves are compared with the actual reliability curves to verify the correctness of the proposed method.
AB - Although SiC MOSFETs, as third-generation semiconductor devices, have shown significant advantages in breakdown voltage, switching frequency, and other performance, their reliability issues are also more prominent. Power cycling tests is the most common testing method for studying the packaging reliability of SiC MOSFETs. Researchers have conducted extensive power cycling tests on SiC MOSFETs, but the steps of reliability calculation and lifetime prediction based on the existing accelerated lifetime models are complex. This method consists of two parts. Firstly, the structure of the accelerated lifetime model is constructed by combining the Coffin-Manson model and Weibull distribution. Secondly, the likelihood equation systems are derived for both complete data and right censored data. In addition, the accelerated lifetime model is established based on power cycling tests, and the predicted reliability curves are compared with the actual reliability curves to verify the correctness of the proposed method.
KW - Accelerated life test
KW - Lifetime prediction
KW - Parameter estimation
KW - SiC MOSFETs
KW - Weibull distribution
UR - https://www.scopus.com/pages/publications/105032826145
U2 - 10.1109/SRSE67406.2025.11357411
DO - 10.1109/SRSE67406.2025.11357411
M3 - 会议稿件
AN - SCOPUS:105032826145
T3 - 2025 7th International Conference on System Reliability and Safety Engineering, SRSE 2025
SP - 7
EP - 12
BT - 2025 7th International Conference on System Reliability and Safety Engineering, SRSE 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th International Conference on System Reliability and Safety Engineering, SRSE 2025
Y2 - 20 November 2025 through 23 November 2025
ER -