Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films

Usman Ilyas; R. S. Rawat; Y. Wang; T. L. Tan; P. Lee; R. Chen; H. D. Sun; Fengji Li; Sam Zhang

doi:10.1016/j.apsusc.2012.03.043

Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films

Usman Ilyas
, R. S. Rawat^*
, Y. Wang
, T. L. Tan
, P. Lee
, R. Chen
, H. D. Sun
, Fengji Li
, Sam Zhang

^*Corresponding author for this work

Nanyang Technological University
University of Engineering and Technology Lahore

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

The un-doped and Mn doped ZnO thin films, with oxygen rich stoichiometry, were deposited onto Si (1 0 0) substrate using spin coating technique. The structural analysis revealed the hexagonal wurtzite structure without any impurity phase formation. A consistent increase in cell volume with the increase in Mn doping concentration confirmed the successful incorporation of bigger sized tetrahedral Mn ²⁺ ions (0.83 ) in ZnO host matrix that was also endorsed by the presence of Mn 2p _3/2 core level XPS spectroscopic peak. Extended deep level emission (DLE) spectra centered at ∼627 nm confirmed the presence of oxygen interstitials. Moreover, the magnetic measurements of field dependent M-H curves revealed the origin of ferromagnetic ordering from Mn-defect pair exchange coupling with oxygen interstitials in ZnO host matrix.

Original language	English
Pages (from-to)	6373-6378
Number of pages	6
Journal	Applied Surface Science
Volume	258
Issue number	17
DOIs	https://doi.org/10.1016/j.apsusc.2012.03.043
State	Published - 15 Jun 2012
Externally published	Yes

Keywords

Dilute magnetic semiconductors (DMS)
Oxygen interstitials
Room temperature ferromagnetism (RTFM)
Spin coating technique
ZnO:Mn thin films

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10.1016/j.apsusc.2012.03.043

Cite this

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title = "Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films",

abstract = " The un-doped and Mn doped ZnO thin films, with oxygen rich stoichiometry, were deposited onto Si (1 0 0) substrate using spin coating technique. The structural analysis revealed the hexagonal wurtzite structure without any impurity phase formation. A consistent increase in cell volume with the increase in Mn doping concentration confirmed the successful incorporation of bigger sized tetrahedral Mn 2+ ions (0.83 ) in ZnO host matrix that was also endorsed by the presence of Mn 2p 3/2 core level XPS spectroscopic peak. Extended deep level emission (DLE) spectra centered at ∼627 nm confirmed the presence of oxygen interstitials. Moreover, the magnetic measurements of field dependent M-H curves revealed the origin of ferromagnetic ordering from Mn-defect pair exchange coupling with oxygen interstitials in ZnO host matrix.",

keywords = "Dilute magnetic semiconductors (DMS), Oxygen interstitials, Room temperature ferromagnetism (RTFM), Spin coating technique, ZnO:Mn thin films",

author = "Usman Ilyas and Rawat, \{R. S.\} and Y. Wang and Tan, \{T. L.\} and P. Lee and R. Chen and Sun, \{H. D.\} and Fengji Li and Sam Zhang",

year = "2012",

month = jun,

day = "15",

doi = "10.1016/j.apsusc.2012.03.043",

language = "英语",

volume = "258",

pages = "6373--6378",

journal = "Applied Surface Science",

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TY - JOUR

T1 - Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films

AU - Ilyas, Usman

AU - Rawat, R. S.

AU - Wang, Y.

AU - Tan, T. L.

AU - Lee, P.

AU - Chen, R.

AU - Sun, H. D.

AU - Li, Fengji

AU - Zhang, Sam

PY - 2012/6/15

Y1 - 2012/6/15

N2 - The un-doped and Mn doped ZnO thin films, with oxygen rich stoichiometry, were deposited onto Si (1 0 0) substrate using spin coating technique. The structural analysis revealed the hexagonal wurtzite structure without any impurity phase formation. A consistent increase in cell volume with the increase in Mn doping concentration confirmed the successful incorporation of bigger sized tetrahedral Mn 2+ ions (0.83 ) in ZnO host matrix that was also endorsed by the presence of Mn 2p 3/2 core level XPS spectroscopic peak. Extended deep level emission (DLE) spectra centered at ∼627 nm confirmed the presence of oxygen interstitials. Moreover, the magnetic measurements of field dependent M-H curves revealed the origin of ferromagnetic ordering from Mn-defect pair exchange coupling with oxygen interstitials in ZnO host matrix.

AB - The un-doped and Mn doped ZnO thin films, with oxygen rich stoichiometry, were deposited onto Si (1 0 0) substrate using spin coating technique. The structural analysis revealed the hexagonal wurtzite structure without any impurity phase formation. A consistent increase in cell volume with the increase in Mn doping concentration confirmed the successful incorporation of bigger sized tetrahedral Mn 2+ ions (0.83 ) in ZnO host matrix that was also endorsed by the presence of Mn 2p 3/2 core level XPS spectroscopic peak. Extended deep level emission (DLE) spectra centered at ∼627 nm confirmed the presence of oxygen interstitials. Moreover, the magnetic measurements of field dependent M-H curves revealed the origin of ferromagnetic ordering from Mn-defect pair exchange coupling with oxygen interstitials in ZnO host matrix.

KW - Dilute magnetic semiconductors (DMS)

KW - Oxygen interstitials

KW - Room temperature ferromagnetism (RTFM)

KW - Spin coating technique

KW - ZnO:Mn thin films

UR - https://www.scopus.com/pages/publications/84860252736

U2 - 10.1016/j.apsusc.2012.03.043

DO - 10.1016/j.apsusc.2012.03.043

M3 - 文章

AN - SCOPUS:84860252736

SN - 0169-4332

VL - 258

SP - 6373

EP - 6378

JO - Applied Surface Science

JF - Applied Surface Science

IS - 17

ER -

Alteration of Mn exchange coupling by oxygen interstitials in ZnO:Mn thin films

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Keywords

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