Al-doped ZnO thin films deposited by reactive frequency magnetron sputtering: H2-induced property changes

Weifeng Liu; Guotong Du; Yanfeng Sun; Yibin Xu; Tianpeng Yang; Xinsheng Wang; Yuchun Chang; Fabin Qiu

doi:10.1016/j.tsf.2006.08.021

Al-doped ZnO thin films deposited by reactive frequency magnetron sputtering: H₂-induced property changes

Weifeng Liu
, Guotong Du^*
, Yanfeng Sun
, Yibin Xu
, Tianpeng Yang
, Xinsheng Wang
, Yuchun Chang
, Fabin Qiu

^*Corresponding author for this work

Dalian University of Technology
Jilin University

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Al-doped ZnO (AZO) transparent conductive thin films have been prepared by radio-frequency magnetron sputtering with a ceramic target (98 wt.% ZnO, 2 wt.% Al₂O₃) in different Ar + H₂ ambient at a substrate temperature of 200 °C. To investigate the influence of H₂-flow on the properties of AZO films, H₂-flow was changed during the growth process with a fixed Ar-flow of 60 sccm. The results indicate that H₂-flow has a considerable influence on the transparent conductive properties of AZO films. The low resistivity in the order of 10^{- 4} Ω cm and the high average transmittance more than 92% in the visible range were obtained for the samples prepared in the optimal H₂-flow range from 0.4 sccm to 1.0 sccm. In addition, the influence of H₂-flow on the structure and composition of AZO films have also been studied.

Original language	English
Pages (from-to)	3057-3060
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	5
DOIs	https://doi.org/10.1016/j.tsf.2006.08.021
State	Published - 22 Jan 2007
Externally published	Yes

Keywords

Al-doped zinc oxide
Hydrogen
Sputtering
Transparent conductive oxides
Zin oxide

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10.1016/j.tsf.2006.08.021

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@article{c7eb9eeae65f4c3792d35e359e6fb3d2,

title = "Al-doped ZnO thin films deposited by reactive frequency magnetron sputtering: H2-induced property changes",

abstract = "Al-doped ZnO (AZO) transparent conductive thin films have been prepared by radio-frequency magnetron sputtering with a ceramic target (98 wt.\% ZnO, 2 wt.\% Al2O3) in different Ar + H2 ambient at a substrate temperature of 200 °C. To investigate the influence of H2-flow on the properties of AZO films, H2-flow was changed during the growth process with a fixed Ar-flow of 60 sccm. The results indicate that H2-flow has a considerable influence on the transparent conductive properties of AZO films. The low resistivity in the order of 10- 4 Ω cm and the high average transmittance more than 92\% in the visible range were obtained for the samples prepared in the optimal H2-flow range from 0.4 sccm to 1.0 sccm. In addition, the influence of H2-flow on the structure and composition of AZO films have also been studied.",

keywords = "Al-doped zinc oxide, Hydrogen, Sputtering, Transparent conductive oxides, Zin oxide",

author = "Weifeng Liu and Guotong Du and Yanfeng Sun and Yibin Xu and Tianpeng Yang and Xinsheng Wang and Yuchun Chang and Fabin Qiu",

year = "2007",

month = jan,

day = "22",

doi = "10.1016/j.tsf.2006.08.021",

language = "英语",

volume = "515",

pages = "3057--3060",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "5",

}

TY - JOUR

T1 - Al-doped ZnO thin films deposited by reactive frequency magnetron sputtering

T2 - H2-induced property changes

AU - Liu, Weifeng

AU - Du, Guotong

AU - Sun, Yanfeng

AU - Xu, Yibin

AU - Yang, Tianpeng

AU - Wang, Xinsheng

AU - Chang, Yuchun

AU - Qiu, Fabin

PY - 2007/1/22

Y1 - 2007/1/22

N2 - Al-doped ZnO (AZO) transparent conductive thin films have been prepared by radio-frequency magnetron sputtering with a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3) in different Ar + H2 ambient at a substrate temperature of 200 °C. To investigate the influence of H2-flow on the properties of AZO films, H2-flow was changed during the growth process with a fixed Ar-flow of 60 sccm. The results indicate that H2-flow has a considerable influence on the transparent conductive properties of AZO films. The low resistivity in the order of 10- 4 Ω cm and the high average transmittance more than 92% in the visible range were obtained for the samples prepared in the optimal H2-flow range from 0.4 sccm to 1.0 sccm. In addition, the influence of H2-flow on the structure and composition of AZO films have also been studied.

AB - Al-doped ZnO (AZO) transparent conductive thin films have been prepared by radio-frequency magnetron sputtering with a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3) in different Ar + H2 ambient at a substrate temperature of 200 °C. To investigate the influence of H2-flow on the properties of AZO films, H2-flow was changed during the growth process with a fixed Ar-flow of 60 sccm. The results indicate that H2-flow has a considerable influence on the transparent conductive properties of AZO films. The low resistivity in the order of 10- 4 Ω cm and the high average transmittance more than 92% in the visible range were obtained for the samples prepared in the optimal H2-flow range from 0.4 sccm to 1.0 sccm. In addition, the influence of H2-flow on the structure and composition of AZO films have also been studied.

KW - Al-doped zinc oxide

KW - Hydrogen

KW - Sputtering

KW - Transparent conductive oxides

KW - Zin oxide

UR - https://www.scopus.com/pages/publications/33845992584

U2 - 10.1016/j.tsf.2006.08.021

DO - 10.1016/j.tsf.2006.08.021

M3 - 文章

AN - SCOPUS:33845992584

SN - 0040-6090

VL - 515

SP - 3057

EP - 3060

JO - Thin Solid Films

JF - Thin Solid Films

IS - 5

ER -

Al-doped ZnO thin films deposited by reactive frequency magnetron sputtering: H₂-induced property changes

Abstract

Keywords

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