Abstract
Effects of in situ annealing on adhesion and structure of thick and highly crystallized cubic boron nitride films deposited by bias assisted dc jet plasma chemical vapor deposition were investigated. Improvement of adhesion by in situ annealing was observed. The full width at half maximum of Raman and X-ray diffraction peaks decreased after in situ annealing. The calculated crystal size increases from 18.4 to 27.2 nm after in situ annealing at 1060-1100 °C. Thick and highly crystallized cubic boron nitride films were obtained by combining our growth process and the in situ annealing.
| Original language | English |
|---|---|
| Pages (from-to) | 4737-4740 |
| Number of pages | 4 |
| Journal | Surface and Coatings Technology |
| Volume | 200 |
| Issue number | 16-17 |
| DOIs | |
| State | Published - 27 Apr 2006 |
| Externally published | Yes |
Keywords
- Adhesion
- Annealing
- Chemical vapor deposition
- Cubic boron nitride
- Raman
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