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Actively Q-switched laser performance of sholmium-doped Lu 2SiO5 crystal

  • Bao Quan Yao*
  • , Xiao Ming Duan
  • , Zheng Ping Yu
  • , Yue Zhu Wang
  • *Corresponding author for this work
  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

We present the actively Q-switched performance of Ho3+ in LSO crystal for operation at cryogenic and room temperature. For a cryogenic-temperature Q-switched Tm,Ho:LSO laser, a total incident diode power of 12.1 W is used to generate a maximum pulse energy of 1.15 mJ at a pulse repetition frequency (PRF) of 2 kHz (15.8 kW peak power). For a room-temperature Q-switched Ho:LSO laser pumped directly by a 1.91-μm Tm:YLF laser, the maximum average output power of 1.75 W and the shortest pulse width of 39 ns are achieved at a PRF of 5 kHz when the absorbed pump power is 12.2 W.

Original languageEnglish
Article number034208
JournalChinese Physics Letters
Volume29
Issue number3
DOIs
StatePublished - Mar 2012

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