Achieving Room-Temperature Charge Density Wave in Transition Metal Dichalcogenide 1T-VSe₂

Charge density wave (CDW) systems have been widely studied and proposed to be potential candidates for next-generation electronic devices. However, the lack of room-temperature CDW materials has limited the development of CDW-based electronic devices, and thus finding a way to manipulate the CDW transitions and orders toward room temperature will be of importance. Room-temperature and above CDW transition in 1T-VSe₂ is reported. The CDW transition is found to shift to ≈114 K at 0.7 GPa, and further compression enhances the transition temperature dramatically, reaching ≈358 K at 14.6 GPa. High-pressure Raman spectroscopy measurement confirms that room-temperature CDW order is achieved and persists up to 15 GPa. Such significant enhancement in CDW can be attributed to the pressure enhanced out-of-plane Fermi surface nesting and CDW gap in 1T-VSe₂. The observation of room- and high-temperature CDW transition in 1T-VSe₂ under pressure provides an engineering approach to optimizing the CDW as needed in applications, which does not only open up a new platform for searching and controlling novel states of two-dimensional materials, but also promotes a practical development of CDW-related technology and devices.